Effect of rare earth Pr doping on core characteristics of electrodeposited nanocrystalline Cu2O films: a film for optoelectronic technology

• Published in: Journal of sol-gel science and technology 2019-06, Vol.90 (3), p.578-588
• Main Authors: Ravichandiran, C., Sakthivelu, A., Davidprabu, R., Deva Arun Kumar, K., Valanarasu, S., Kathalingam, A., Ganesh, V., Shkir, Mohd, Algarni, H., AlFaify, S.
• Format: Article
• Language: English
• Subjects: Ceramics; Chemistry and Materials Science; Composites; Copper oxides; Crystal structure; Crystallites; Doping; electronic; Emission spectra; Glass; Inorganic Chemistry; magnetic and ferroelectric applications; Materials Science; Morphology; Nanocrystals; Nanotechnology; Natural Materials; Optical and Electronic Materials; Optical properties; Optoelectronics; Original Paper: Sol-gel and hybrid materials for dielectric; Phase matching; Photosensitivity; Refractivity; Thickness
• ISSN: 0928-0707; 1573-4846
• DOI: 10.1007/s10971-019-04934-3

Undoped and Pr doped Cu 2 O nanocrystalline films were fabricated by the electrodeposition method. These films were studied to investigate the formation, morphology, optical, and photoresponse properties on Pr doping concentrations (i.e., 0, 1, 3, and 5 wt%). Structural studies of the deposited Cu 2 O:Pr films exposed the cubic crystal structure with polycrystalline nature. The crystallite size is decreased from 54 to 29 nm by increasing the Pr doping concentrations. The Raman peaks at 110, 147, 215, 413, and 633 confirm the Cu 2 O phase and well matched with the XRD results. The morphological study shows that the pyramid-shaped particles are homogeneously arranged on the film surfaces. The absorption is high for the film deposited with the 5% Pr doping is due to the maximum thickness than the other films. The calculated band gap values of Cu 2 O:Pr films were reduced from 2.06 to 1.90 eV with raising the Pr doping level. PL spectra showed high intense emission peak at 617 nm which confirms the NBE emission of Cu 2 O lattice. Index of refraction ( n ) and coefficient of extinction ( k ) values were increased on increasing the doping concentration from 0 to 5%. From photosensitivity analysis, there is an increase of photoresponse behavior with respect to illuminated current. SEM micrographs, band gap evaluation, photoluminescence and I – V characteristics of Cu 2 O nanostructured thin films: an effect of Pr doping. Highlights Pr:Cu 2 O thin films were deposited using electrodeposition method for the first time. Pyramid-shaped grains like morphology was confirmed by SEM study. Band gap was reduced from 2.06 to 1.90 eV due to Pr doping in Cu 2 O. Quenching of PL intensity was observed due to Pr doping in Cu 2 O. Enhancement in photoresponse was observed due to Pr doping in Cu 2 O.