High-power broad-area laser diode performance improvement with a double pedestal structure

We propose a novel heat-sinking structure for a high-power broad-area laser diode. In our laser diode, the pedestal structure is introduced to both top and bottom sides of the laser diode so that the heat generated within the device can be more efficiently released. The characteristics of high-power...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-04, Vol.58 (4), p.42004
Main Authors: Kim, Younghyun, Yang, Jung-Tack, Choi, Woo-Young
Format: Article
Language:English
Subjects:
Active regions (lasers)
Computer simulation
Diodes
Far fields
High power lasers
Lasers
Semiconductor lasers
Thermal simulation
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c341t-359671f3921c3f8051652a0f19c1d863e8092b180cd4d3ede8ee77315a59b63
cites cdi_FETCH-LOGICAL-c341t-359671f3921c3f8051652a0f19c1d863e8092b180cd4d3ede8ee77315a59b63
container_end_page
container_issue 4
container_start_page 42004
container_title Japanese Journal of Applied Physics
container_volume 58
creator Kim, Younghyun
Yang, Jung-Tack
Choi, Woo-Young
description We propose a novel heat-sinking structure for a high-power broad-area laser diode. In our laser diode, the pedestal structure is introduced to both top and bottom sides of the laser diode so that the heat generated within the device can be more efficiently released. The characteristics of high-power broad-area laser diodes containing the double pedestal structure are numerically analyzed by self-consistent electro-thermal-optical simulation. It is demonstrated that our laser diode has narrower lateral far-field angle and lower active region temperature compared to previously reported high-power laser diode structures.
doi_str_mv 10.7567/1347-4065/ab0c71
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2222923086</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2222923086</sourcerecordid><originalsourceid>FETCH-LOGICAL-c341t-359671f3921c3f8051652a0f19c1d863e8092b180cd4d3ede8ee77315a59b63</originalsourceid><addsrcrecordid>eNp9kM1LxDAQxYMouK7ePQa8eLDu5KsfR1nUFQQPevIS0iR1W9pNTVoX_3tTKnoR5zLM8HvzhofQOYHrTKTZijCeJRxSsVIl6IwcoMXP6hAtAChJeEHpMToJoYljKjhZoNdN_bZNere3HpfeKZMobxVuVYgLUztjcW995Xyndtriuuu9-7Cd3Q14Xw9brLBxY9lOlLFhUC0Ogx_1MHp7io4q1QZ79t2X6Pnu9mW9SR6f7h_WN4-JZpwMCRNFmpGKFZRoVuUgSCqogooUmpg8ZTaHgpYkB224YdEltzbLGBFKFGXKluhivhofex_jC7Jxo99FQ0ljFZRBPlEwU9q7ELytZO_rTvlPSUBO-ckpLDmFJef8ouRqltSu_735D375B940qpcil1wCpwBc9qZiX1m5fsA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2222923086</pqid></control><display><type>article</type><title>High-power broad-area laser diode performance improvement with a double pedestal structure</title><source>Institute of Physics</source><creator>Kim, Younghyun ; Yang, Jung-Tack ; Choi, Woo-Young</creator><creatorcontrib>Kim, Younghyun ; Yang, Jung-Tack ; Choi, Woo-Young</creatorcontrib><description>We propose a novel heat-sinking structure for a high-power broad-area laser diode. In our laser diode, the pedestal structure is introduced to both top and bottom sides of the laser diode so that the heat generated within the device can be more efficiently released. The characteristics of high-power broad-area laser diodes containing the double pedestal structure are numerically analyzed by self-consistent electro-thermal-optical simulation. It is demonstrated that our laser diode has narrower lateral far-field angle and lower active region temperature compared to previously reported high-power laser diode structures.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/1347-4065/ab0c71</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Active regions (lasers) ; Computer simulation ; Diodes ; Far fields ; High power lasers ; Lasers ; Semiconductor lasers ; Thermal simulation</subject><ispartof>Japanese Journal of Applied Physics, 2019-04, Vol.58 (4), p.42004</ispartof><rights>2019 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Apr 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c341t-359671f3921c3f8051652a0f19c1d863e8092b180cd4d3ede8ee77315a59b63</citedby><cites>FETCH-LOGICAL-c341t-359671f3921c3f8051652a0f19c1d863e8092b180cd4d3ede8ee77315a59b63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1347-4065/ab0c71/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,38847,53818</link.rule.ids></links><search><creatorcontrib>Kim, Younghyun</creatorcontrib><creatorcontrib>Yang, Jung-Tack</creatorcontrib><creatorcontrib>Choi, Woo-Young</creatorcontrib><title>High-power broad-area laser diode performance improvement with a double pedestal structure</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We propose a novel heat-sinking structure for a high-power broad-area laser diode. In our laser diode, the pedestal structure is introduced to both top and bottom sides of the laser diode so that the heat generated within the device can be more efficiently released. The characteristics of high-power broad-area laser diodes containing the double pedestal structure are numerically analyzed by self-consistent electro-thermal-optical simulation. It is demonstrated that our laser diode has narrower lateral far-field angle and lower active region temperature compared to previously reported high-power laser diode structures.</description><subject>Active regions (lasers)</subject><subject>Computer simulation</subject><subject>Diodes</subject><subject>Far fields</subject><subject>High power lasers</subject><subject>Lasers</subject><subject>Semiconductor lasers</subject><subject>Thermal simulation</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9kM1LxDAQxYMouK7ePQa8eLDu5KsfR1nUFQQPevIS0iR1W9pNTVoX_3tTKnoR5zLM8HvzhofQOYHrTKTZijCeJRxSsVIl6IwcoMXP6hAtAChJeEHpMToJoYljKjhZoNdN_bZNere3HpfeKZMobxVuVYgLUztjcW995Xyndtriuuu9-7Cd3Q14Xw9brLBxY9lOlLFhUC0Ogx_1MHp7io4q1QZ79t2X6Pnu9mW9SR6f7h_WN4-JZpwMCRNFmpGKFZRoVuUgSCqogooUmpg8ZTaHgpYkB224YdEltzbLGBFKFGXKluhivhofex_jC7Jxo99FQ0ljFZRBPlEwU9q7ELytZO_rTvlPSUBO-ckpLDmFJef8ouRqltSu_735D375B940qpcil1wCpwBc9qZiX1m5fsA</recordid><startdate>20190401</startdate><enddate>20190401</enddate><creator>Kim, Younghyun</creator><creator>Yang, Jung-Tack</creator><creator>Choi, Woo-Young</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20190401</creationdate><title>High-power broad-area laser diode performance improvement with a double pedestal structure</title><author>Kim, Younghyun ; Yang, Jung-Tack ; Choi, Woo-Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c341t-359671f3921c3f8051652a0f19c1d863e8092b180cd4d3ede8ee77315a59b63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Active regions (lasers)</topic><topic>Computer simulation</topic><topic>Diodes</topic><topic>Far fields</topic><topic>High power lasers</topic><topic>Lasers</topic><topic>Semiconductor lasers</topic><topic>Thermal simulation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Younghyun</creatorcontrib><creatorcontrib>Yang, Jung-Tack</creatorcontrib><creatorcontrib>Choi, Woo-Young</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Younghyun</au><au>Yang, Jung-Tack</au><au>Choi, Woo-Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-power broad-area laser diode performance improvement with a double pedestal structure</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2019-04-01</date><risdate>2019</risdate><volume>58</volume><issue>4</issue><spage>42004</spage><pages>42004-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We propose a novel heat-sinking structure for a high-power broad-area laser diode. In our laser diode, the pedestal structure is introduced to both top and bottom sides of the laser diode so that the heat generated within the device can be more efficiently released. The characteristics of high-power broad-area laser diodes containing the double pedestal structure are numerically analyzed by self-consistent electro-thermal-optical simulation. It is demonstrated that our laser diode has narrower lateral far-field angle and lower active region temperature compared to previously reported high-power laser diode structures.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.7567/1347-4065/ab0c71</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2019-04, Vol.58 (4), p.42004
issn 0021-4922
1347-4065
language eng
recordid cdi_proquest_journals_2222923086
source Institute of Physics
subjects Active regions (lasers)
Computer simulation
Diodes
Far fields
High power lasers
Lasers
Semiconductor lasers
Thermal simulation
title High-power broad-area laser diode performance improvement with a double pedestal structure
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T19%3A28%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-power%20broad-area%20laser%20diode%20performance%20improvement%20with%20a%20double%20pedestal%20structure&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Kim,%20Younghyun&rft.date=2019-04-01&rft.volume=58&rft.issue=4&rft.spage=42004&rft.pages=42004-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.7567/1347-4065/ab0c71&rft_dat=%3Cproquest_cross%3E2222923086%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c341t-359671f3921c3f8051652a0f19c1d863e8092b180cd4d3ede8ee77315a59b63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2222923086&rft_id=info:pmid/&rfr_iscdi=true