Morphology, Crystal Structure and Ferromagnetic Resonance Properties of Submicron-Thick Yttrium Iron Garnet Films Prepared by Pulsed Laser Deposition

Submicron-thick yttrium iron garnet films were grown on a gadolinium gallium garnet substrate by pulsed laser deposition. The morphology and crystal structure results show that the submicron-thick film has a flat surface, low surface roughness of ∼ 0.5 ± 0.05 nm and good epitaxy with the (444) plane...

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Bibliographic Details
Published in:Journal of electronic materials 2019-08, Vol.48 (8), p.4850-4855
Main Authors: Guo, Qian-Wen, Zheng, Hui, Zheng, Liang, Deng, Jiang-Xia, Zheng, Peng, Wu, Qiong
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystal structure
Dependence
Electronics and Microelectronics
Ferromagnetic materials
Ferromagnetic resonance
Flat surfaces
Gadolinium
Gadolinium-gallium garnet
Hysteresis loops
Instrumentation
Iron
Magnetic properties
Materials Science
Morphology
Optical and Electronic Materials
Pulsed laser deposition
Pulsed lasers
Solid State Physics
Substrates
Surface roughness
Thick films
Yttrium
Yttrium-iron garnet
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Summary:Submicron-thick yttrium iron garnet films were grown on a gadolinium gallium garnet substrate by pulsed laser deposition. The morphology and crystal structure results show that the submicron-thick film has a flat surface, low surface roughness of ∼ 0.5 ± 0.05 nm and good epitaxy with the (444) plane. Magnetic hysteresis loops also indicate that the submicron-thick film has great soft magnetic properties. However, the ferromagnetic resonance (FMR) spectrum shows that the submicron-thick film has multiple resonance peaks. The angular dependence of the FMR response of the 10-nm-thick, 100-nm-thick and 525-nm-thick films shows that peaks 1 (at low field) and 2 (at high field) observed in the 525-nm-thick film spectrum originate from the internal layer and the outer layer of the films, respectively. Lastly, the angular dependence of the FMR linewidth shows that the lowest FMR linewidth occurred at an angle between the direction of the static field and film normal of 50°.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-019-07279-3