New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate

• Published in: Crystallography reports 2019-03, Vol.64 (2), p.205-211
• Main Authors: Galiev, G. B., Trunkin, I. N., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Maltsev, P. P., Pushkarev, S. S.
• Format: Article
• Language: English
• Subjects: Antennas; Crystal growth; Crystal structure; Crystallography and Scattering Methods; Crystals; Epitaxial growth; Film thickness; Gallium arsenide; High temperature; Physics; Physics and Astronomy; Precipitates; Real Structure of Crystals; Silicon substrates; Single crystals; Superlattices
• ISSN: 1063-7745; 1562-689X
• DOI: 10.1134/S1063774519020111

The structural characteristics of a new structure for photoconductive antennas have been investigated. This structure is a multilayered epitaxial film grown on a GaAs(111) A substrate; it consists of alternating undoped low-temperature grown GaAs (LTG-GaAs) layers and GaAs layers synthesized in the standard high-temperature regime and doped with silicon (GaAs:Si). The As 4 /Ga flow ratio γ is chosen such as to produce p -type GaAs:Si layers. LTG-GaAs layers were grown at an enlarged γ value. The samples grown on GaAs(100) substrates were single-crystal, whereas the single-crystal growth on GaAs(111) A substrates changed to polycrystalline when the film thickness reached 320–340 nm. The sizes of As precipitates in annealed samples, their distribution over the film thickness, and specific features of their crystal structure have been analyzed.