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BaFe12O19 films prepared on Al2O3 (0 0 0 1) by direct current magnetron sputtering
•BaFe12O19 films were fabricated using direct current magnetron sputtering.•The out-of-plane c-axis orientation structure was verified by X-ray pole figure.•Substrate temperature affects a lot on the epitaxial-like growth of the film.•The relationship between magnetic properties and microstructure w...
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Published in: | Materials letters 2019-08, Vol.248, p.24-27 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •BaFe12O19 films were fabricated using direct current magnetron sputtering.•The out-of-plane c-axis orientation structure was verified by X-ray pole figure.•Substrate temperature affects a lot on the epitaxial-like growth of the film.•The relationship between magnetic properties and microstructure was analyzed.
M-type hexaferrite BaFe12O19 films that exhibit a uniaxial magnetic-crystalline anisotropy hold great application promise in the field of magnetic data-storage and microwave devices. In this letter, BaFe12O19 thin films that show an out-of-plane magnetic anisotropy were prepared on c-plane Al2O3 substrates by direct current magnetron sputtering, which is high-efficiency but seldom adopted in the fabrication of ceramic materials including most hexaferrites. In addition, the textured BaFe12O19 film with hexagonal c-axis lying in the film surface was also discussed in this work. The epitaxial-like growth of the BaFe12O19 films was characterized by the combination of x-ray diffractions and pole figures. Self-biasing properties of the films induced by the epitaxial-like structure were reflected in the magnetic measurement of hysteresis loops. The film sample deposited at high temperature of 600 °C exhibited a relatively large remanent magnetization (65% of the saturation magnetization) normal to the film surface, and a small one of |
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ISSN: | 0167-577X 1873-4979 |
DOI: | 10.1016/j.matlet.2019.03.139 |