Optimized InGaN-diode pumping of Ti:sapphire crystals

The development of higher-power InGaN-based diode lasers facilitates their application to optical pumping of Ti:sapphire lasers. Recent diode-pumping results highlight some unexpected behavior, specifically with 450-nm-wavelength devices. To better understand this we have measured and characterized,...

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Bibliographic Details
Published in:Optical materials express 2019-05, Vol.9 (5), p.2131
Main Authors: Moulton, Peter F., Cederberg, Jeffrey G., Stevens, Kevin T., Foundos, Greg, Koselja, Michal, Preclikova, Jana
Format: Article
Language:English
Subjects:
Absorption
Doping
Indium gallium nitrides
Lasers
Optical pumping
Sapphire
Semiconductor lasers
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Summary:The development of higher-power InGaN-based diode lasers facilitates their application to optical pumping of Ti:sapphire lasers. Recent diode-pumping results highlight some unexpected behavior, specifically with 450-nm-wavelength devices. To better understand this we have measured and characterized, over a wide range of doping levels, the absorption properties of Ti:sapphire crystals. We find significant changes in the spectral shape of the pumping band in Ti:sapphire with increased doping, and explain the results in terms of absorption due to pairs of Ti3+ ions. Our subsequent discussion attempts to explain prior data, and also provides guidance on optimizing designs for InGaN-diode-pumped Ti:sapphire lasers.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.9.002131