P‐18: Improving Switching Characteristics of p‐type Copper Oxide Thin‐film Transistors by Germanium Oxide Passivation through Reactive Sputtering

We have suggested p‐type copper oxide (CuOx) thin‐film transistors (TFTs) with improved switching characteristics by germanium oxide (GeOx) passivation through a reactive sputtering method. From the results, the on/off current ratio and subthreshold swing (S.S) of GeOx passivated CuOx TFTs were rema...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2019-06, Vol.50 (1), p.1279-1282
Main Authors: Min, Won Kyung, Park, Sung Pyo, Jung, Tae Soo, Kim, Hee Jun, Lee, Jin Hyeok, Park, Kyungho, Kim, Hyun Jae
Format: Article
Language:English
Subjects:
Copper
copper oxide
Copper oxides
germanium oxide
Germanium oxides
passivation
Passivity
reactive sputtering
Semiconductor devices
Sputtering
Switching
Thin-film transistors
Transistors
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Summary:We have suggested p‐type copper oxide (CuOx) thin‐film transistors (TFTs) with improved switching characteristics by germanium oxide (GeOx) passivation through a reactive sputtering method. From the results, the on/off current ratio and subthreshold swing (S.S) of GeOx passivated CuOx TFTs were remarkably improved.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.13167