Novel Trench Wiring Formation Process using Photosensitive Insulation Film for Next Generation Packaging

As there is an increasing demand for advanced electronic devices, high-density and fine circuit is required more than ever before. However, it is difficult to fabricate fine Cu wiring below 5µm on an organic substrate using current processes such as semi-additive process (SAP). In this paper, the tr...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 2016/06/21, Vol.29(3), pp.391-394
Main Authors: Iwashita, Kenichi, Katoh, Tetsuya, Nakamura, Akihiro, Murakami, Yasuharu, Iwasaki, Tomio
Format: Article
Language:English
Subjects:
Density
Electronic devices
Insulation
Integrated circuits
molecular dynamics
Organic materials
Photolithography
photosensitive insulation film
Photosensitivity
Protective coatings
Substrates
trench wiring formation process
Very large scale integration
Wiring
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Summary:As there is an increasing demand for advanced electronic devices, high-density and fine circuit is required more than ever before. However, it is difficult to fabricate fine Cu wiring below 5µm on an organic substrate using current processes such as semi-additive process (SAP). In this paper, the trench wiring formation process with photosensitive organic materials was studied to make fine Cu wiring below 5µm. Photosensitive organic materials were mainly used as protection and insulation layers of very large scale integrated circuit because they simplify via formation processing by photolithography. We newly developed film-type photosensitive insulation material for high-density interposer. The photosensitive insulation film (PIF) showed high resolution (L/S = 3/3µm for 10µm-thick film) and suitability to novel trench Cu wiring formation process. Cu embedded wiring (L/S = 3/3µm for 10µm-thick Cu) was enabled by trench Cu wiring formation process.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.29.391