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Impact of Zr precursor on the electrochemical properties of V2O5 sol-gel films
In this work, we explore the impact of Zr precursor on the electrochemical and optical properties of V2O5 thin films. These films were synthesized by the combination of the sol-gel route with dip-coating deposition on the electron conducting (fluorine tin oxide; FTO) substrate. We used vanadium oxyt...
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Published in: | Journal of electroanalytical chemistry (Lausanne, Switzerland) Switzerland), 2019-04, Vol.839, p.67-74 |
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creator | Loi, Monique R. Moura, Elton A. Westphal, Talita M. Balboni, Raphael. D.C. Gündel, André Flores, Wladimir H. Pereira, Marcelo B. Santos, Marcos J.L. Santos, Jaqueline F.L. Pawlicka, Agnieszka Avellaneda, César O. |
description | In this work, we explore the impact of Zr precursor on the electrochemical and optical properties of V2O5 thin films. These films were synthesized by the combination of the sol-gel route with dip-coating deposition on the electron conducting (fluorine tin oxide; FTO) substrate. We used vanadium oxytriisopropoxide (V) - [OV(OC3H7)3] and zirconium isopropoxide (IV) - [Zr(OCH2CH2CH3)4] as precursors, isopropanol as solvent, and glacial acetic acid as a catalyst. After the deposition, the thin films were subjected to densification at 350°C for 30min. We characterized these films by electrochemical techniques (cyclic voltammetry, chronoamperometry and chronocoulometry) and we obtained the best result of the load density of 109mC·cm−2 for V2O5 sample prepared with 5mol% of Zr precursor; this sample also presented satisfactory responses of cyclic stability. We used atomic force microscopy (AFM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) to obtain morphology and crystallinity of this film. Its optical properties, we studied by UV–vis spectroscopy and the transmittance results were of 82% for the discolored and 39% for colored states, both measured at 633nm. In summary, we show that V2O5:ZrO2 thin films have quite attractive properties for their application as a working electrode in electrochromic devices.
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•Different V2O5:ZrO2 thin films were synthesized and characterized.•V2O5 doped with 5 mol% ZrO2 had the best value of charge density of 109 mC/cm2.•The ΔT between colored and discolored states of this film was 43% at 633 nm.•This film had an orthorhombic structure with the preferential (001) orientation in the crystalline plane.•The AFM topography evidenced dense and compact structure and RMS roughness of 7.06 nm. |
doi_str_mv | 10.1016/j.jelechem.2019.03.012 |
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[Display omitted]
•Different V2O5:ZrO2 thin films were synthesized and characterized.•V2O5 doped with 5 mol% ZrO2 had the best value of charge density of 109 mC/cm2.•The ΔT between colored and discolored states of this film was 43% at 633 nm.•This film had an orthorhombic structure with the preferential (001) orientation in the crystalline plane.•The AFM topography evidenced dense and compact structure and RMS roughness of 7.06 nm.</description><identifier>ISSN: 1572-6657</identifier><identifier>EISSN: 1873-2569</identifier><identifier>DOI: 10.1016/j.jelechem.2019.03.012</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Acetic acid ; Atomic force microscopy ; Densification ; Deposition ; Dip coatings ; Discoloration ; Electrochemical analysis ; Electrochromic cells ; Electrochromic properties ; Electrochromism ; Fluorine ; Immersion coating ; Microscopy ; Morphology ; Optical properties ; Precursors ; Scanning electron microscopy ; Sol-gel processes ; Spectrum analysis ; Substrates ; Thin films ; Tin oxides ; V2O5:ZrO2 ; Vanadium pentoxide ; X-ray diffraction ; Zirconium dioxide</subject><ispartof>Journal of electroanalytical chemistry (Lausanne, Switzerland), 2019-04, Vol.839, p.67-74</ispartof><rights>2019</rights><rights>Copyright Elsevier Science Ltd. Apr 15, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c270t-b8d5b77af025e9ecc2108b0a6b58eaab611a9c564c1de661859a1750579de28e3</citedby><cites>FETCH-LOGICAL-c270t-b8d5b77af025e9ecc2108b0a6b58eaab611a9c564c1de661859a1750579de28e3</cites><orcidid>0000-0002-8754-0493</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Loi, Monique R.</creatorcontrib><creatorcontrib>Moura, Elton A.</creatorcontrib><creatorcontrib>Westphal, Talita M.</creatorcontrib><creatorcontrib>Balboni, Raphael. D.C.</creatorcontrib><creatorcontrib>Gündel, André</creatorcontrib><creatorcontrib>Flores, Wladimir H.</creatorcontrib><creatorcontrib>Pereira, Marcelo B.</creatorcontrib><creatorcontrib>Santos, Marcos J.L.</creatorcontrib><creatorcontrib>Santos, Jaqueline F.L.</creatorcontrib><creatorcontrib>Pawlicka, Agnieszka</creatorcontrib><creatorcontrib>Avellaneda, César O.</creatorcontrib><title>Impact of Zr precursor on the electrochemical properties of V2O5 sol-gel films</title><title>Journal of electroanalytical chemistry (Lausanne, Switzerland)</title><description>In this work, we explore the impact of Zr precursor on the electrochemical and optical properties of V2O5 thin films. These films were synthesized by the combination of the sol-gel route with dip-coating deposition on the electron conducting (fluorine tin oxide; FTO) substrate. We used vanadium oxytriisopropoxide (V) - [OV(OC3H7)3] and zirconium isopropoxide (IV) - [Zr(OCH2CH2CH3)4] as precursors, isopropanol as solvent, and glacial acetic acid as a catalyst. After the deposition, the thin films were subjected to densification at 350°C for 30min. We characterized these films by electrochemical techniques (cyclic voltammetry, chronoamperometry and chronocoulometry) and we obtained the best result of the load density of 109mC·cm−2 for V2O5 sample prepared with 5mol% of Zr precursor; this sample also presented satisfactory responses of cyclic stability. We used atomic force microscopy (AFM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) to obtain morphology and crystallinity of this film. Its optical properties, we studied by UV–vis spectroscopy and the transmittance results were of 82% for the discolored and 39% for colored states, both measured at 633nm. In summary, we show that V2O5:ZrO2 thin films have quite attractive properties for their application as a working electrode in electrochromic devices.
[Display omitted]
•Different V2O5:ZrO2 thin films were synthesized and characterized.•V2O5 doped with 5 mol% ZrO2 had the best value of charge density of 109 mC/cm2.•The ΔT between colored and discolored states of this film was 43% at 633 nm.•This film had an orthorhombic structure with the preferential (001) orientation in the crystalline plane.•The AFM topography evidenced dense and compact structure and RMS roughness of 7.06 nm.</description><subject>Acetic acid</subject><subject>Atomic force microscopy</subject><subject>Densification</subject><subject>Deposition</subject><subject>Dip coatings</subject><subject>Discoloration</subject><subject>Electrochemical analysis</subject><subject>Electrochromic cells</subject><subject>Electrochromic properties</subject><subject>Electrochromism</subject><subject>Fluorine</subject><subject>Immersion coating</subject><subject>Microscopy</subject><subject>Morphology</subject><subject>Optical properties</subject><subject>Precursors</subject><subject>Scanning electron microscopy</subject><subject>Sol-gel processes</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Tin oxides</subject><subject>V2O5:ZrO2</subject><subject>Vanadium pentoxide</subject><subject>X-ray diffraction</subject><subject>Zirconium dioxide</subject><issn>1572-6657</issn><issn>1873-2569</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEqXwC8gS6wTbwY_sQBWPShXdAAs2luNMqKOkDnaKxN_jKLBm5Vnce8ZzELqkJKeEius2b6EDu4M-Z4SWOSlyQtkRWlAli4xxUR6nmUuWCcHlKTqLsSWEKUXZAj2v-8HYEfsGvwc8BLCHEH3Afo_HHeAJPAY_wZ01XQr4AcLoIE6NN7blOPou-4AON67r4zk6aUwX4eL3XaLXh_uX1VO22T6uV3ebzDJJxqxSNa-kNA1hHEqwllGiKmJExRUYUwlKTWm5uLG0BiGo4qWhkhMuyxqYgmKJrmZu-tDnAeKoW38I-7RSM1ZwwihXPKXEnLLBxxig0UNwvQnfmhI9udOt_nOnJ3eaFDq5S8XbuQjphi8HQUfrYG-hdsnQqGvv_kP8AJKfeps</recordid><startdate>20190415</startdate><enddate>20190415</enddate><creator>Loi, Monique R.</creator><creator>Moura, Elton A.</creator><creator>Westphal, Talita M.</creator><creator>Balboni, Raphael. D.C.</creator><creator>Gündel, André</creator><creator>Flores, Wladimir H.</creator><creator>Pereira, Marcelo B.</creator><creator>Santos, Marcos J.L.</creator><creator>Santos, Jaqueline F.L.</creator><creator>Pawlicka, Agnieszka</creator><creator>Avellaneda, César O.</creator><general>Elsevier B.V</general><general>Elsevier Science Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0002-8754-0493</orcidid></search><sort><creationdate>20190415</creationdate><title>Impact of Zr precursor on the electrochemical properties of V2O5 sol-gel films</title><author>Loi, Monique R. ; Moura, Elton A. ; Westphal, Talita M. ; Balboni, Raphael. D.C. ; Gündel, André ; Flores, Wladimir H. ; Pereira, Marcelo B. ; Santos, Marcos J.L. ; Santos, Jaqueline F.L. ; Pawlicka, Agnieszka ; Avellaneda, César O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-b8d5b77af025e9ecc2108b0a6b58eaab611a9c564c1de661859a1750579de28e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Acetic acid</topic><topic>Atomic force microscopy</topic><topic>Densification</topic><topic>Deposition</topic><topic>Dip coatings</topic><topic>Discoloration</topic><topic>Electrochemical analysis</topic><topic>Electrochromic cells</topic><topic>Electrochromic properties</topic><topic>Electrochromism</topic><topic>Fluorine</topic><topic>Immersion coating</topic><topic>Microscopy</topic><topic>Morphology</topic><topic>Optical properties</topic><topic>Precursors</topic><topic>Scanning electron microscopy</topic><topic>Sol-gel processes</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Tin oxides</topic><topic>V2O5:ZrO2</topic><topic>Vanadium pentoxide</topic><topic>X-ray diffraction</topic><topic>Zirconium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Loi, Monique R.</creatorcontrib><creatorcontrib>Moura, Elton A.</creatorcontrib><creatorcontrib>Westphal, Talita M.</creatorcontrib><creatorcontrib>Balboni, Raphael. D.C.</creatorcontrib><creatorcontrib>Gündel, André</creatorcontrib><creatorcontrib>Flores, Wladimir H.</creatorcontrib><creatorcontrib>Pereira, Marcelo B.</creatorcontrib><creatorcontrib>Santos, Marcos J.L.</creatorcontrib><creatorcontrib>Santos, Jaqueline F.L.</creatorcontrib><creatorcontrib>Pawlicka, Agnieszka</creatorcontrib><creatorcontrib>Avellaneda, César O.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of electroanalytical chemistry (Lausanne, Switzerland)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Loi, Monique R.</au><au>Moura, Elton A.</au><au>Westphal, Talita M.</au><au>Balboni, Raphael. D.C.</au><au>Gündel, André</au><au>Flores, Wladimir H.</au><au>Pereira, Marcelo B.</au><au>Santos, Marcos J.L.</au><au>Santos, Jaqueline F.L.</au><au>Pawlicka, Agnieszka</au><au>Avellaneda, César O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of Zr precursor on the electrochemical properties of V2O5 sol-gel films</atitle><jtitle>Journal of electroanalytical chemistry (Lausanne, Switzerland)</jtitle><date>2019-04-15</date><risdate>2019</risdate><volume>839</volume><spage>67</spage><epage>74</epage><pages>67-74</pages><issn>1572-6657</issn><eissn>1873-2569</eissn><abstract>In this work, we explore the impact of Zr precursor on the electrochemical and optical properties of V2O5 thin films. These films were synthesized by the combination of the sol-gel route with dip-coating deposition on the electron conducting (fluorine tin oxide; FTO) substrate. We used vanadium oxytriisopropoxide (V) - [OV(OC3H7)3] and zirconium isopropoxide (IV) - [Zr(OCH2CH2CH3)4] as precursors, isopropanol as solvent, and glacial acetic acid as a catalyst. After the deposition, the thin films were subjected to densification at 350°C for 30min. We characterized these films by electrochemical techniques (cyclic voltammetry, chronoamperometry and chronocoulometry) and we obtained the best result of the load density of 109mC·cm−2 for V2O5 sample prepared with 5mol% of Zr precursor; this sample also presented satisfactory responses of cyclic stability. We used atomic force microscopy (AFM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) to obtain morphology and crystallinity of this film. Its optical properties, we studied by UV–vis spectroscopy and the transmittance results were of 82% for the discolored and 39% for colored states, both measured at 633nm. In summary, we show that V2O5:ZrO2 thin films have quite attractive properties for their application as a working electrode in electrochromic devices.
[Display omitted]
•Different V2O5:ZrO2 thin films were synthesized and characterized.•V2O5 doped with 5 mol% ZrO2 had the best value of charge density of 109 mC/cm2.•The ΔT between colored and discolored states of this film was 43% at 633 nm.•This film had an orthorhombic structure with the preferential (001) orientation in the crystalline plane.•The AFM topography evidenced dense and compact structure and RMS roughness of 7.06 nm.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jelechem.2019.03.012</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-8754-0493</orcidid></addata></record> |
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subjects | Acetic acid Atomic force microscopy Densification Deposition Dip coatings Discoloration Electrochemical analysis Electrochromic cells Electrochromic properties Electrochromism Fluorine Immersion coating Microscopy Morphology Optical properties Precursors Scanning electron microscopy Sol-gel processes Spectrum analysis Substrates Thin films Tin oxides V2O5:ZrO2 Vanadium pentoxide X-ray diffraction Zirconium dioxide |
title | Impact of Zr precursor on the electrochemical properties of V2O5 sol-gel films |
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