On the Visualization of the Magnetoelectric Coupling Region for a Thin Ferromagnetic Layer on a Ferroelectric Substrate

— Scanning electron microscopy results demonstrate that coupling of the ferromagnetic and ferroelectric components in a Co/PbZr 0.45 Ti 0.55 O 3 /Co thin-film structure, resulting in a considerable magnitude (several to tens of mV/A) of a low-frequency magnetoelectric effect at room temperature, ext...

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Bibliographic Details
Published in:Inorganic materials 2019-03, Vol.55 (3), p.284-289
Main Authors: Stognij, A. I., Novitskii, N. N., Sharko, S. A., Bespalov, A. V., Golikova, O. L., Smirnova, M. N., Ketsko, V. A.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Coupling
Ferroelectric materials
Ferroelectricity
Ferromagnetism
Industrial Chemistry/Chemical Engineering
Information storage
Inorganic Chemistry
Materials Science
Scanning electron microscopy
Substrates
Thin films
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Summary:— Scanning electron microscopy results demonstrate that coupling of the ferromagnetic and ferroelectric components in a Co/PbZr 0.45 Ti 0.55 O 3 /Co thin-film structure, resulting in a considerable magnitude (several to tens of mV/A) of a low-frequency magnetoelectric effect at room temperature, extends to a depth of up to 20 μm. This makes it possible to optimize the thickness of the PbZr 0.45 Ti 0.55 O 3 substrate and enhance the performance of such structures for use as sensing elements in information storage/processing devices and magnetic field sensors based on the magnetoelectric effect.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168519030142