Strongly Bias-Dependent Tunnel Magnetoresistance in Manganite Spin Filter Tunnel Junctions

A highly unconventional bias‐dependent tunnel magnetoresistance (TMR) response is observed in Sm0.75Sr0.25MnO3‐based nanopillar spin filter tunnel junctions (SFTJs) with two different behaviors in two different thickness regimes of the barrier layer. Thinner barrier devices exhibit conventional SFTJ...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-05, Vol.27 (19), p.3079-3084
Main Authors: Prasad, Bhagwati, Zhang, Wenrui, Jian, Jie, Wang, Haiyan, Blamire, Mark G.
Format: Article
Language:English
Subjects:
Barrier layers
Bias
Coulomb blockade
Dependence
Fowler-Nordheim tunneling
Magnetoresistance
Magnetoresistivity
manganites
Materials science
spin filter
Thickness
Tunnel junctions
Tunnel magnetoresistance
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Summary:A highly unconventional bias‐dependent tunnel magnetoresistance (TMR) response is observed in Sm0.75Sr0.25MnO3‐based nanopillar spin filter tunnel junctions (SFTJs) with two different behaviors in two different thickness regimes of the barrier layer. Thinner barrier devices exhibit conventional SFTJ behaviors; however, for larger barrier thicknesses, the TMR‐bias dependence is more complex and reverses sign at higher bias.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201405147