Study of Microstructure Features of the Surface Region of the Photovoltaic Converter with an Antireflective Porous Silicon Film and an n+—p Junction

Using methods for measuring photocurrent and Raman scattering spectra the surface region microstructure of the silicon photovoltaic converter with n + — p junction and an antireflective porous silicon film is studied. The n + — p junction is formed by thermal diffusion of phosphorus from a porous fi...

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Bibliographic Details
Published in:Bulletin of the Lebedev Physics Institute 2019, Vol.46 (1), p.36-39
Main Authors: Mel’nik, N. N., Fedorov, V. L., Tregulov, V. V.
Format: Article
Language:English
Subjects:
Antireflection coatings
Coarsening
Converters
Crystallites
High temperature
Measurement methods
Microstructure
Photoelectric effect
Photoelectric emission
Physics
Physics and Astronomy
Porous silicon
Raman spectra
Silicon
Thermal diffusion
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Summary:Using methods for measuring photocurrent and Raman scattering spectra the surface region microstructure of the silicon photovoltaic converter with n + — p junction and an antireflective porous silicon film is studied. The n + — p junction is formed by thermal diffusion of phosphorus from a porous film. It is found that high-temperature treatment during diffusion results in coarsening silicon crystallites and a decrease in the defect density in the porous silicon film. It is noted that the n + — p junction is formed within the largest crystallites of the porous silicon film.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335619010111