Near-infrared-absorbing Photodetectors Based on Naphtho[1,3,2]oxazaborinine-type Dibenzo-BODIPY Dyes

The steep demand for developing photodetectors with NIR absorption led us to prepare monolayer devices composed of indium tin oxide, NIR dibenzo-BODIPYs with naphtho[1,3,2]oxazaborinines 1 or 2, and Al. When the 1-loaded device was irradiated with 800 nm light at a fluence of 130 µW cm−2, an on-to-o...

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Bibliographic Details
Published in:Chemistry letters 2018-03, Vol.47 (3), p.300-303
Main Authors: Kubo, Yuji, Tobinaga, Shun, Ueno, Yoshihide, Aotake, Tatsuya, Yakushiji, Hidenori, Yamamoto, Tatsuya
Format: Article
Language:English
Subjects:
Absorption
Dark current
Fluence
Image resolution
Indium tin oxides
Near infrared radiation
Photoelectric effect
Photoelectric emission
Photometers
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Summary:The steep demand for developing photodetectors with NIR absorption led us to prepare monolayer devices composed of indium tin oxide, NIR dibenzo-BODIPYs with naphtho[1,3,2]oxazaborinines 1 or 2, and Al. When the 1-loaded device was irradiated with 800 nm light at a fluence of 130 µW cm−2, an on-to-off current ratio of 4.44 × 102 was produced at a 1 V bias potential, with a dark current density of 8.49 × 10−9 A cm−2. This excellent light-associated cycle of photocurrent production and non-production warrants further investigation for a high-resolution photodetector in image sensing applications.
ISSN:0366-7022
1348-0715
DOI:10.1246/cl.171061