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Near-infrared-absorbing Photodetectors Based on Naphtho[1,3,2]oxazaborinine-type Dibenzo-BODIPY Dyes
The steep demand for developing photodetectors with NIR absorption led us to prepare monolayer devices composed of indium tin oxide, NIR dibenzo-BODIPYs with naphtho[1,3,2]oxazaborinines 1 or 2, and Al. When the 1-loaded device was irradiated with 800 nm light at a fluence of 130 µW cm−2, an on-to-o...
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Published in: | Chemistry letters 2018-03, Vol.47 (3), p.300-303 |
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creator | Kubo, Yuji Tobinaga, Shun Ueno, Yoshihide Aotake, Tatsuya Yakushiji, Hidenori Yamamoto, Tatsuya |
description | The steep demand for developing photodetectors with NIR absorption led us to prepare monolayer devices composed of indium tin oxide, NIR dibenzo-BODIPYs with naphtho[1,3,2]oxazaborinines 1 or 2, and Al. When the 1-loaded device was irradiated with 800 nm light at a fluence of 130 µW cm−2, an on-to-off current ratio of 4.44 × 102 was produced at a 1 V bias potential, with a dark current density of 8.49 × 10−9 A cm−2. This excellent light-associated cycle of photocurrent production and non-production warrants further investigation for a high-resolution photodetector in image sensing applications. |
doi_str_mv | 10.1246/cl.171061 |
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subjects | Absorption Dark current Fluence Image resolution Indium tin oxides Near infrared radiation Photoelectric effect Photoelectric emission Photometers |
title | Near-infrared-absorbing Photodetectors Based on Naphtho[1,3,2]oxazaborinine-type Dibenzo-BODIPY Dyes |
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