Enhanced Wall-Plug Efficiency in AlGaN-Based Deep-Ultraviolet LED via a Novel Honeycomb Hole-Shaped Structure

The novel honeycomb hole-shaped electrode (HHSE) structure was proposed for 280-nm AlGaN-based flip-chip deep-ultraviolet light emitting diode (DUV-LED), which was demonstrated to be beneficial to the current spreading, optical emission, and heat dispersion. By means of the finite element method, we...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-07, Vol.66 (7), p.2997-3002
Main Authors: Zhang, Shuang, Wu, Feng, Wang, Shuai, Zhang, Huixue, Zhang, Yi, Xu, Linlin, Dai, Jiangnan, Chen, Changqing
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Current density
Current distribution
Current spreading
deep-ultraviolet LED (DUV-LED)
Density distribution
Efficiency
Electrodes
Emission
Finite element method
honeycomb hole-shaped electrode (HHSE)
Injection current
Light emitting diodes
Proximity effects
Resistance
Spreading
Ultraviolet radiation
wall-plug efficiency (WPE)
Wide band gap semiconductors
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Summary:The novel honeycomb hole-shaped electrode (HHSE) structure was proposed for 280-nm AlGaN-based flip-chip deep-ultraviolet light emitting diode (DUV-LED), which was demonstrated to be beneficial to the current spreading, optical emission, and heat dispersion. By means of the finite element method, we investigated the current density distribution at an injection current density of 67.5 A/cm 2 and found that the effective current spreading area was approximately improved by 35.3% for the light emitting diode (LED) with a novel electrode compared with the LED with the conventional finger-shape electrode. As a result, the wall-plug efficiency (WPE) of the LED with a novel electrode was increased by 28% at an injection current of 280 mA. Meanwhile, the symmetrical distribution of optical emission and temperature was realized. This paper paves the way to solve the current crowding effect due to the poor conductivity of the n-AlGaN layers with high Al fraction and significantly develop high efficiency in the AlGaN-based DUV-LED.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2913962