Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles

Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was...

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Bibliographic Details
Published in:Optics and spectroscopy 2019-05, Vol.126 (5), p.492-496
Main Authors: Kosarev, A. N., Chaldyshev, V. V., Kondikov, A. A., Vartanyan, T. A., Toropov, N. A., Gladskikh, I. A., Gladskikh, P. V., Akimov, I., Bayer, M., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.
Format: Article
Language:English
Subjects:
Aluminum
Arsenides
Epitaxial growth
Gallium arsenide
Indium gallium arsenides
Intermetallic compounds
Lasers
Luminescence
Mesostructures
Metamaterials
Molecular beam epitaxy
Nanoparticles
Optical Devices
Optics
Optics of Low-Dimensional Structures
Photoluminescence
Photonics
Physics
Physics and Astronomy
Quantum dots
Silver
Vacuum thermal evaporation
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Summary:Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.
ISSN:0030-400X
1562-6911
DOI:10.1134/S0030400X19050151