Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure

GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), ener...

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Bibliographic Details
Published in:Optics and spectroscopy 2019-05, Vol.126 (5), p.458-462
Main Authors: Guseinov, A. G., Salmanov, V. M., Mamedov, R. M., Salmanova, A. A., Akhmedova, F. M.
Format: Article
Language:English
Subjects:
Absorption spectra
Atomic force microscopy
Heterojunctions
Heterostructures
Lasers
Microscopy
Optical Devices
Optical properties
Optics
Photoelectric effect
Photoelectricity
Photonics
Physics
Physics and Astronomy
Scanning electron microscopy
Spectroscopy of Condensed States
Thin films
X-ray diffraction
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Summary:GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p -GaS/ n -InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p -GaS/ n -InSe heterojunctions have been experimentally investigated.
ISSN:0030-400X
1562-6911
DOI:10.1134/S0030400X19050102