A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes

The TiO 2 / p -Si/Ag, graphene nanoparticles doped (GNR) TiO 2 / p -Si/Ag and multi-walled carbon nanotube (MWCNT) doped TiO 2 / p -Si/Ag photodiodes were fabricated by electro-spinning technique at the same experimental conditions, and their structural, morphological and electrical properties were...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2019-07, Vol.30 (14), p.13617-13626
Main Authors: Erdal, Mehmet Okan, Yıldırım, Murat, Kocyigit, Adem
Format: Article
Language:English
Subjects:
Brookite
Carbon
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electrical properties
Graphene
Heterojunctions
Industrial applications
Light
Materials Science
Morphology
Multi wall carbon nanotubes
Nanoparticles
Optical and Electronic Materials
Photodiodes
Preferred orientation
Resistance factors
Silicon
Silver
Thermionic emission
Titanium dioxide
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Summary:The TiO 2 / p -Si/Ag, graphene nanoparticles doped (GNR) TiO 2 / p -Si/Ag and multi-walled carbon nanotube (MWCNT) doped TiO 2 / p -Si/Ag photodiodes were fabricated by electro-spinning technique at the same experimental conditions, and their structural, morphological and electrical properties were compared for photodiode applications. XRD measurements were confirmed undoped, GNR and MWCNT doped TiO 2 structures, and brookite phase of (121) preferred orientation TiO 2 has been observed from XRD patterns. SEM images of the heterojunctions showed that undoped and doped TiO 2 layer have homogenous surfaces. I – V measurements were performed for electrical characterization of the TiO 2 / p -Si/Ag, GNR-TiO 2 / p -Si/Ag and MWCNT-TiO 2 / p -Si/Ag photodiodes under dark and light illumination conditions at room temperatures. The results imparted that all heterojunctions have good rectifying and photodiode properties. Some heterojunction parameters such as ideality factor, barrier height, series resistance were calculated and discussed in details according to thermionic emission theory, Cheung and Norde techniques. The determined ideality factor values are 8.55, 9.70 and 8.99, and barrier height values are 0.75 eV, 0.74 eV and 0.73 eV for the TiO 2 / p -Si/Ag, GNR-TiO 2 / p -Si/Ag and MWCNT-TiO 2 / p -Si/Ag photodiodes, respectively. These heterojunctions can be considered and improved as photodiodes in industrial applications.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-019-01731-0