Semiconductor behavior of pentagonal silver nanowires measured under mechanical deformation

In the present work, electrical measurements using in situ transmission electron microscopy (TEM) on pentagonal silver nanowires were performed. Electrical biasing was applied to individual nanowires with and without simultaneous in situ TEM mechanical deformation. The response of the ohmic resistan...

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Bibliographic Details
Published in:Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology 2019-07, Vol.21 (7), p.1-8, Article 134
Main Authors: Ochoa, Edgar, Alducin, Diego, Sanchez, John E., Fernando, Clemente, Santiago, Ulises, Ponce, Arturo
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Deformation
Deformation mechanisms
Deformation resistance
Dislocations
Electrical measurement
Electrical properties
Holography
Inorganic Chemistry
Lasers
Materials Science
Morphology
Nanoparticles
Nanotechnology
Nanowires
Optical Devices
Optics
Photonics
Physical Chemistry
Research Paper
Transmission electron microscopy
Volt-ampere characteristics
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Summary:In the present work, electrical measurements using in situ transmission electron microscopy (TEM) on pentagonal silver nanowires were performed. Electrical biasing was applied to individual nanowires with and without simultaneous in situ TEM mechanical deformation. The response of the ohmic resistance was measured in the I-V curves. A reduction in the break voltage and the resistance was measured, when the nanowires were subjected to a bending deformation. In situ electric measurements on both, with and without deformation, show a typical semiconductor behavior. Surface scattering of electrons in the nanowires and movement of dislocations act as the main causes of the electrical properties reported herein. In this way, the determination of the surface morphology was carried out by using off-axis electron holography followed by a phase reconstruction and structural modeling. The high Miller-index facets were determined to be the (533) stepped surface plane on all five longitudinal sides of the nanowires. Additionally, due to electrical saturation, a breakdown of the nanowires was observed during the in situ electrical measurements without mechanical deformation. Graphical abstract
ISSN:1388-0764
1572-896X
DOI:10.1007/s11051-019-4577-3