Valence band structure and effective masses of GaN ( 10 1 ¯ 0 )

The electronic structure of the clean and stoichiometric GaN(101¯0) cleavage surface is investigated in a comprehensive angle-resolved photoelectron spectroscopy study. A clear distinction between surface and bulk related features allows us to measure the dispersions of the occupied surface state ba...

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Bibliographic Details
Published in:Physical review. B 2019-05, Vol.99 (19), p.195306, Article 195306
Main Authors: Franz, Martin, Appelfeller, Stephan, Eisele, Holger, Ebert, Philipp, Dähne, Mario
Format: Article
Language:English
Subjects:
Band theory
Electronic structure
Electrons
Photoelectrons
Valence band
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Summary:The electronic structure of the clean and stoichiometric GaN(101¯0) cleavage surface is investigated in a comprehensive angle-resolved photoelectron spectroscopy study. A clear distinction between surface and bulk related features allows us to measure the dispersions of the occupied surface state band from the N dangling bonds as well as of the uppermost bulk valence bands and to extract the effective hole masses directly with high precision. This is performed along various directions in k∥ space providing a detailed picture of the electronic band dispersion. The obtained results show three separated bulk bands without indications of a crossing of these bands as commonly predicted in theoretical works. Moreover, from the observed Fermi-level pinning we determine the position of the minimum of the empty Ga-derived surface state band, which is found deep within the fundamental band gap at ∼2.3 eV above the valence band maximum.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.99.195306