Plasma Etching of Silicon at a High Flow and a High Pressure of NF3 in Reactive Ion Etching

Capacitively coupled plasma reactive ion etching of silicon by injecting nitrogen trifluoride (NF 3 ) gas was conducted, and the etching process was studied with a residual gas analyzer and an optical emission spectroscopy. During the etching of silicon by the NF 3 plasma, the currents of F + and Si...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2019-06, Vol.74 (12), p.1135-1139
Main Authors: Kwon, Hee-Tae, Kim, Woo-Jae, Shin, Gi-Won, Lee, Hwan-Hee, Lee, Tae-Hyun, Kang, Min-Ho, Kwon, Gi-Chung
Format: Article
Language:English
Subjects:
Emission analysis
Emission spectroscopy
Flow velocity
Fluorine
Gas analyzers
Ion currents
Ion etching
Mathematical and Computational Physics
Nitrogen fluorides
Optical emission spectroscopy
Particle and Nuclear Physics
Physics
Physics and Astronomy
Plasma etching
Reactive ion etching
Residual gas
Silicon
Spectrum analysis
Theoretical
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Summary:Capacitively coupled plasma reactive ion etching of silicon by injecting nitrogen trifluoride (NF 3 ) gas was conducted, and the etching process was studied with a residual gas analyzer and an optical emission spectroscopy. During the etching of silicon by the NF 3 plasma, the currents of F + and SiF + 3 ions were obtained from the residual gas analyzer. At the same time, the line intensity of fluorine was measured using optical emission spectroscopy. The ion currents of F + and SiF + 3 and the line intensity of fluorine were highest for etching at high pressure. With the results of this study, the general characteristics of reactive ion etching of silicon by using NF 3 plasma were confirmed. In addition, by simply changing the flow rate of NF 3 , a high NF 3 flow rate was found to result in a high etch rate because of the reduced residence time.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.74.1135