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A Low Power Cantilever-Based Metal Oxide Semiconductor Gas Sensor

This letter, for the first time, reports a novel metal oxide semiconductor (MOS) gas sensor based on a single cantilever. The extremely brief Platinum microheater without any coil, is on a 10 μm wide cantilever, which shows very low static power consumption and fast heating response. Sensors were fa...

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Bibliographic Details
Published in:IEEE electron device letters 2019-07, Vol.40 (7), p.1178-1181
Main Authors: Xie, Dongcheng, Chen, Dongliang, Peng, Shufeng, Yang, Yujie, Xu, Lei, Wu, Feng
Format: Article
Language:English
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Summary:This letter, for the first time, reports a novel metal oxide semiconductor (MOS) gas sensor based on a single cantilever. The extremely brief Platinum microheater without any coil, is on a 10 μm wide cantilever, which shows very low static power consumption and fast heating response. Sensors were fabricated on a four inch Si wafer using typical micro-electro-mechanical system (MEMS) process, and SnO 2 was chosen as the sensing material. Test results indicate that the static power consumption is only 2.96 mW. With this applied power, the sensor can reach 400 °C and the heating-up time is just 260 μs. Both of them are enormously improved, comparing with the MEMS MOS gas sensors with suspended membrane supported by slender beams. The sensor shows a good linear characteristic to 0-10 ppm ethanol. Moreover, due to the single cantileverstructure, ten sensors can be fabricated inside a die of 1 mm 2 , improving the integration by an order of magnitude.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2914271