A study on wavelength dependent persistence photoconduction of indium gallium zinc oxide thin film

Here we report the behavior of photo response properties of indium gallium zinc oxide (IGZO) thin film grown by pulsed laser deposited on quartz. During IGZO film illumination in the wavelength range from 500∼300nm (visible to ultraviolet) the photo current increased gradually while a large increase...

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Bibliographic Details
Main Authors: Samanta, Chandan, Ghosh, Barnali
Format: Conference Proceeding
Language:English
Subjects:
Dynamic response
Gallium
Illumination
Incident light
Indium
Indium gallium zinc oxide
Light
Photoelectric effect
Photoelectric emission
Pulsed laser deposition
Pulsed lasers
Thin films
Zinc oxide
Zinc oxides
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Summary:Here we report the behavior of photo response properties of indium gallium zinc oxide (IGZO) thin film grown by pulsed laser deposited on quartz. During IGZO film illumination in the wavelength range from 500∼300nm (visible to ultraviolet) the photo current increased gradually while a large increase of photo-current was observed below 325 nm i.e. the band edge wavelength. The maximum photo-current was observed at 300nm. By removing the illumination the polycrystalline film of IGZO shows the persistence nature of photocurrent and persistence strongly depends on the wavelength of incident light. By fitting the dynamic response, we observed the rising time (τr) and decay time (τd) of photo current is 120-205 s and 1000-5500s respectively. The observed results are consistent with the optical gap of ∼3.68 eV extracted from the absorption measurement.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5113171