Enhanced luminescence efficiency of GaN:Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles

We demonstrate the enhancement of luminescence efficiency in GaN:Eu-based light emitting diodes (LEDs) by surface plasmons utilizing gold nanoparticles (NPs). A gold thin film is deposited on a GaN:Eu layer and subsequently thermal-annealed to form gold NPs. The size of the NPs can be controlled by...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SCCC09
Main Authors: Tatebayashi, Jun, Yamada, Tomoya, Inaba, Tomohiro, Ichikawa, Shuhei, Fujiwara, Yasufumi
Format: Article
Language:English
Subjects:
Coupling
Efficiency
Film thickness
Gallium nitrides
Gold
Injection current
Light emitting diodes
Luminescence
Luminous intensity
Nanoparticles
Organic light emitting diodes
Photoluminescence
Plasmons
Thin films
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Summary:We demonstrate the enhancement of luminescence efficiency in GaN:Eu-based light emitting diodes (LEDs) by surface plasmons utilizing gold nanoparticles (NPs). A gold thin film is deposited on a GaN:Eu layer and subsequently thermal-annealed to form gold NPs. The size of the NPs can be controlled by changing the thickness of the films. The room-temperature photoluminescence (PL) intensity of the GaN:Eu LEDs with the NPs increases by 1.42-times compared with those without the NPs when the film thickness is 15 nm, which is attributed to enhanced light extraction efficiency due to coupling with localized surface plasmons. Time-resolved PL spectra at 10 K of the LEDs with the NPs show a shorter lifetime, supporting the existence of the coupling with local surface plasmons. The injection current-light output intensity profiles of the LEDs with the NPs shows 1.3-times enhancement of the output power due to coupling with local surface plasmons.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab0ad1