Effect of methane additive on GaN growth using the OVPE method

The oxide vapor phase epitaxy method is expected to be a useful technique for bulk GaN growth, because it allows long-term growth without producing a solid byproduct. However, thick GaN crystals have not been realized due to the growth inhibition caused by polycrystal formation resulting from high H...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SC1021
Main Authors: Kitamoto, Akira, Takino, Junichi, Sumi, Tomoaki, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Gunji, Yoshikazu, Imanishi, Masayuki, Okayama, Yoshio, Nobuoka, Masaki, Isemura, Masashi, Yoshimura, Masashi, Mori, Yusuke
Format: Article
Language:English
Subjects:
Crystal growth
Crystal structure
Crystallinity
Epitaxial growth
Flow velocity
Methane
Partial pressure
Polycrystals
Vapor phase epitaxy
Vapor phases
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The oxide vapor phase epitaxy method is expected to be a useful technique for bulk GaN growth, because it allows long-term growth without producing a solid byproduct. However, thick GaN crystals have not been realized due to the growth inhibition caused by polycrystal formation resulting from high H2O partial pressure. In this study, we formed GaN crystals with CH4 gas to decrease the H2O partial pressure in a growth zone by the reaction of CH4 with H2O to produce CO and H2. As a result, H2O partial pressure decreased with increasing CH4 flow rate, and GaN layers could be grown without decrease of growth rate or degradation of the crystalline qualities at a flow rate of 50-100 sccm of CH4 gas. Furthermore, we obtained high crystalline 400-um thick GaN crystals after a growth period of 10 h.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab0d08