The polarization field in Al-rich AlGaN multiple quantum wells

This paper investigates the quantum confined Stark effect in AlGaN multiple quantum well structures with a high Al content grown on single-crystalline AlN substrates. The quantitative relationship between the quantum well structure parameters, photogenerated carrier density, built-in electric field...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SCCC10
Main Authors: Guo, Qiang, Kirste, Ronny, Mita, Seiji, Tweedie, James, Reddy, Pramod, Washiyama, Shun, Breckenridge, M. Hayden, Collazo, Ramón, Sitar, Zlatko
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum nitride
Carrier density
Cladding
Electric field strength
Electric fields
Piezoelectricity
Polarization
Quantum wells
Single crystals
Stark effect
Substrates
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Summary:This paper investigates the quantum confined Stark effect in AlGaN multiple quantum well structures with a high Al content grown on single-crystalline AlN substrates. The quantitative relationship between the quantum well structure parameters, photogenerated carrier density, built-in electric field and ground-level emission is discussed. It is found that the electric field strength increases from 0.5 MV cm−1 to almost 3 MV cm−1 when the Al content in the quantum well barriers is increased from 65% to 100%, which is consistent with the theory of spontaneous and piezoelectric polarization in III-nitrides. In addition, the built-in electric field increases significantly with increasing barrier thickness. Based on these results, the electric field in an Al0.55Ga0.45N single quantum well with AlN cladding is predicted to be around 5 MV cm−1.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab07a9