Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n+ junction diodes

The Shockley-Read-Hall (SRH) lifetime in homoepitaxial p-GaN (Na = 1 × 1017 cm−3) is investigated by analyzing forward current-voltage (I-V) characteristics in GaN-on-GaN p-n+ junction diodes with mesa-isolation structure. The ideality factor around 2 due to recombination current was obtained in the...

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Published in:Japanese Journal of Applied Physics 2019-06, Vol.58 (SC), p.SCCB14
Main Authors: Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun
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Language:English
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Current voltage characteristics
Depletion
Empirical analysis
Gallium nitrides
Junction diodes
Lifetime
Temperature dependence
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cited_by cdi_FETCH-LOGICAL-c450t-70089311f9c8db26c4cc7c88d48982b8aa174e377b83d3281d5c0fc5c7ec27c73
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container_issue SC
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container_title Japanese Journal of Applied Physics
container_volume 58
creator Maeda, Takuya
Narita, Tetsuo
Ueda, Hiroyuki
Kanechika, Masakazu
Uesugi, Tsutomu
Kachi, Tetsu
Kimoto, Tsunenobu
Horita, Masahiro
Suda, Jun
description The Shockley-Read-Hall (SRH) lifetime in homoepitaxial p-GaN (Na = 1 × 1017 cm−3) is investigated by analyzing forward current-voltage (I-V) characteristics in GaN-on-GaN p-n+ junction diodes with mesa-isolation structure. The ideality factor around 2 due to recombination current was obtained in the 1.8-2.7 V window, which is different from the characteristic of a p+-n− junction involving considerable diffusion current. The recombination current was proportional to the junction area, indicating that the recombination current is a bulk component, not a mesa-surface component. Analyzing the recombination current with consideration of the SRH recombination rate in the depletion layer, we obtained an SRH lifetime of 46 ps at 298 K. The temperature dependence of the I-V characteristics was also investigated and the SRH lifetimes were extracted in the range of 223-573 K. The SRH lifetime in homoepitaxial p-GaN followed the empirical power law of τ SRH = 1.2 × 10−16 × T 2.25 (s).
doi_str_mv 10.7567/1347-4065/ab07ad
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subjects Current voltage characteristics
Depletion
Empirical analysis
Gallium nitrides
Junction diodes
Lifetime
Temperature dependence
title Shockley-Read-Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p-n+ junction diodes
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