Photovoltaic properties of Pt/BiFeO3 thin film/fluorine-doped tin oxide capacitor

We study the photovoltaic properties of the Pt/BiFeO 3 (BFO) thin film/fluorine-doped tin oxide capacitor and obtain the open circuit voltage ( V oc ) of 0.44 V and short circuit photocurrent ( J sc ) of 0.14 mA/cm 2 under purple laser illumination. As compared to the BFO film with random orientatio...

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Bibliographic Details
Published in:Journal of sol-gel science and technology 2014-10, Vol.72 (1), p.74-79
Main Authors: Zhou, Yin’e, Yu, Benfang, Zhu, Xiaoyan, Tan, Xinyu, Qian, Lihua, Liu, Li, Yu, Jun, Yuan, Songliu
Format: Article
Language:English
Subjects:
Bismuth ferrite
Capacitors
Ceramics
Chemistry
Chemistry and Materials Science
Colloidal gels. Colloidal sols
Colloidal state and disperse state
Composites
Deoxidizing
Electric fields
Exact sciences and technology
Fluorine
General and physical chemistry
Glass
Inorganic Chemistry
Materials Science
Nanotechnology
Natural Materials
Open circuit voltage
Optical and Electronic Materials
Optoelectronic devices
Original Paper
Photoelectric effect
Photoelectric emission
Photosensitivity
Photovoltaic cells
Preferred orientation
Short circuits
Thin films
Tin oxides
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Summary:We study the photovoltaic properties of the Pt/BiFeO 3 (BFO) thin film/fluorine-doped tin oxide capacitor and obtain the open circuit voltage ( V oc ) of 0.44 V and short circuit photocurrent ( J sc ) of 0.14 mA/cm 2 under purple laser illumination. As compared to the BFO film with random orientations, the BFO film with a strong preferred orientation exhibits larger photovoltaic output as a result of its larger spontaneous polarization in the unpoled state. We further demonstrate that there is remarkable influence of external electric field poling on the photovoltage in the two polycrystalline BFO films, and the larger net change of the photovoltage after positive and negative poling in the highly preferred oriented BFO film is believed to be due to its improved crystalline structure. Our experiment results indicate that the responsiveness to external electric field and photovoltaic performance of the narrow-band-gap BFO film can be optimized by structural modification, making it possible to apply in the photosensitive and other optoelectronic devices.
ISSN:0928-0707
1573-4846
DOI:10.1007/s10971-014-3424-3