Ferroelectric Properties of (001)- and (106)-Oriented SrBi2Ta2O9 Epitaxial Thin Films

Epitaxially grown SrBi2Ta2O9 (SBT) thin films with (001) and (106) orientations were prepared on La-doped SrTiO3 (001) and (110) substrates, respectively, by coating-pyrolysis process. When the films were annealed in air, their epitaxy was poor and no significant difference was observed in the P-E c...

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Bibliographic Details
Published in:Journal of sol-gel science and technology 2000-12, Vol.19 (1-3), p.549-552
Main Authors: Nagahama, Tsutomu, Tsuchiya, Toshio, Tsukada, Kenichi, Manabe, Takaaki, Yamaguchi, Iwao, Kumagai, Toshiya, Mizuta, Susumu
Format: Article
Language:English
Subjects:
Anisotropy
Annealing
Epitaxial growth
Ferroelectric materials
Ferroelectricity
Partial pressure
Pyrolysis
Strontium titanates
Substrates
Thin films
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Summary:Epitaxially grown SrBi2Ta2O9 (SBT) thin films with (001) and (106) orientations were prepared on La-doped SrTiO3 (001) and (110) substrates, respectively, by coating-pyrolysis process. When the films were annealed in air, their epitaxy was poor and no significant difference was observed in the P-E characteristics for the films that have different orientations. By contrast, the crystallinity and epitaxy of the films increased with decreasing oxygen partial pressure, p(O2), of annealing atmosphere. Using these high quality epitaxial films, we observed a distinct difference in P-E hysteresis curves, which reflects the orientation of the films. After postannealing of these films in O2 to compensate for possible oxygen deficiency, which might have been introduced into the SBT films owing to low p(O2) annealing, the anisotropy of the ferroelectric response was maintained and almost the same P-E loops were obtained.
ISSN:0928-0707
1573-4846
DOI:10.1023/A:1008792707089