Loading…

Electrical modulation of magnetism in multiferroic heterostructures at room temperature

Multiferroic heterostructures CoPd/0.68Pb(Mg 1/3 Nb 2/3 )O 3 –0.32PbTiO 3 (001) (CoPd/PMN–PT) with the thickness of 10 nm were fabricated via magnetron sputtering. The effect of electric field on remanent magnetization, coercivity, and magnetization reversal have been subsequently investigated. A la...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science 2017-03, Vol.52 (6), p.3330-3336
Main Authors: Yang, Y. T., Li, J., Peng, X. L., Hong, B., Wang, X. Q., Ge, H. L.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Multiferroic heterostructures CoPd/0.68Pb(Mg 1/3 Nb 2/3 )O 3 –0.32PbTiO 3 (001) (CoPd/PMN–PT) with the thickness of 10 nm were fabricated via magnetron sputtering. The effect of electric field on remanent magnetization, coercivity, and magnetization reversal have been subsequently investigated. A large electric field modulation of magnetism is obtained in strain-mediated CoPd/PMN–PT multiferroic heterostructures. Not only the remanent magnetization but also the magnetic coercivity of CoPd film can be effectively modulated by an electric field. Up to 30.7% of magnetization difference is observed by electric field at the vicinity of the magnetic coercivity. Taking the advantage of the different coercivity controlled by electric field, the magnetization reversal can be assisted by electric field. The magnetization reversal process of the CoPd/PMN–PT heterostructure is dominated by the Kondorsky model. Our results provide great opportunities for electric field-controlled magnetic devices.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-016-0620-2