Dissociated \[ \frac{1}{3}\langle 0\bar{1}11\rangle \] dislocations in Bi2Te3 and their relationship to seven-layer Bi3Te4 defects

• Published in: Journal of materials science 2014-06, Vol.49 (11), p.3970-3979
• Main Authors: Medlin, D L, Erickson, K J, Limmer, S J, Yelton, W G, Siegal, M P
• Format: Article
• Language: English
• Subjects: Bismuth tellurides; Burgers vector; Crystal defects; Crystallography; Dislocations; Materials science; Nanowires; Nucleation; Scanning electron microscopy; Scanning transmission electron microscopy; Tellurium; Transmission electron microscopy
• ISSN: 0022-2461; 1573-4803
• DOI: 10.1007/s10853-014-8035-4

We investigate the structure of \[ \frac{1}{3}\langle 0\bar{1}11\rangle \] dislocations observed in Bi2Te3 nanowires. This particular type of dislocation is interesting because it has a large Burgers vector (b = 1.048 nm) with a component normal to the basal planes equal to the thickness of one full Bi2Te3 quintuple unit (i.e., c/3). Atomic-resolution high-angle annular dark-field scanning transmission electron microscopy observations show that the dislocations form with a complex dissociated core structure. This structure consists of two partial dislocations that separate a defected region consisting of a seven-plane-thick septuple unit, consistent with a local patch of Bi3Te4, rather than the normal Bi2Te3 quintuple layer structure. As we discuss, details of the core structure can be understood from an analysis of the crystallographic parameters of the observed partial dislocations. This analysis suggests a mechanism to accommodate the loss of tellurium through the heterogeneous nucleation and growth of seven-layer defects at \[ \frac{1}{3}\langle 0\bar{1}11\rangle \]—type dislocations.