Antiferromagnetic–weak ferromagnetic transition in lightly doped BiFeO3: role of structural defects

Chemical substitution is commonly considered as favoring the suppression of the cycloidal magnetic structure specific to the polar phase of multiferroic BiFeO₃. To reveal the factors underlying the substitution-driven instability of the antiferromagnetic order, synthesis and investigation of the cry...

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Bibliographic Details
Published in:Journal of materials science 2015-11, Vol.50 (22), p.7192-7196
Main Authors: Khomchenko, V. A, Paixão, J. A
Format: Article
Language:English
Subjects:
Antiferromagnetism
bismuth
Bismuth ferrite
calcium
ceramics
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystal defects
Crystal lattices
Crystal structure
Crystallography and Scattering Methods
Cycloids
defects
Ferroelectric materials
Ferroelectricity
Ferromagnetism
ions
iron
Magnetic properties
Magnetic structure
manganese
Materials Science
microscopy
microstructure
Morphology
Organic chemistry
Original Paper
Polymer Sciences
praseodymium
Scanning probe microscopy
Solid Mechanics
structures
Substitutes
titanium
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Summary:Chemical substitution is commonly considered as favoring the suppression of the cycloidal magnetic structure specific to the polar phase of multiferroic BiFeO₃. To reveal the factors underlying the substitution-driven instability of the antiferromagnetic order, synthesis and investigation of the crystal structure, microstructure, local ferroelectric, and magnetic properties of the ceramic samples of Bi₀.₉₅A₀.₀₅Fe₀.₉₅B₀.₀₅O₃ (A = Pr, Ca; B = Mn, Ti) were carried out. The investigation did not reveal any link between the size of the substituting ions and the magnetic behavior of the compounds. However, it found a clear correlation between the magnetic ground state and the morphology/defect structure of the ceramics, as traced by the scanning probe microscopy. The results of the work suggest that the magnetic cycloid should be less stable in those doped materials, in which the charge-compensating mechanism involves the formation of crystal lattice defects.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-015-9273-9