Correlation between grain orientation and carrier concentration of poly-crystalline In2O3 thin film grown by MOCVD

In this study, various In 2 O 3 thin films were grown on c -plane sapphire substrates by metal–organic chemical vapor deposition via changing the growth parameters. The structural and electrical properties of the films were investigated by employing the X-ray diffraction (XRD), scanning electron mic...

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Bibliographic Details
Published in:Journal of materials science 2015-02, Vol.50 (3), p.1058-1064
Main Authors: Hu, Ruiqin, Pei, Yanli, Chen, Zimin, Yang, Jingchuan, Lin, Jiayong, Li, Ya, Liang, Jun, Fan, Bingfeng, Wang, Gang
Format: Article
Language:English
Subjects:
Atomic force microscopy
Carrier density
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Correlation analysis
Crystal structure
Crystallinity
Crystallography and Scattering Methods
Electrical properties
Grain orientation
Hall effect
Indium oxides
Materials Science
Metalorganic chemical vapor deposition
Microscopy
Organic chemicals
Organic chemistry
Original Paper
Polymer Sciences
Preferred orientation
Sapphire
Scanning electron microscopy
Solid Mechanics
Substrates
Thin films
X-ray diffraction
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Summary:In this study, various In 2 O 3 thin films were grown on c -plane sapphire substrates by metal–organic chemical vapor deposition via changing the growth parameters. The structural and electrical properties of the films were investigated by employing the X-ray diffraction (XRD), scanning electron microscopy, conductive atomic force microscopy (CAFM), and Hall Effect measurement. Results revealed that the investigated In 2 O 3 thin films are bcc phase poly-crystalline with preferred orientation along the [100] or [111] direction. Moreover, the existence of two types of grains with different conductivities in the investigated In 2 O 3 thin films was confirmed by CAFM measurement. Interestingly, a positive correlation was found between carrier concentrations and (222)/(400) XRD diffraction peak intensity ratios of the investigated In 2 O 3 thin films. The mechanism of the positive correlation was explained by the difference in impurities concentrations between the two types of grains with the difference crystalline orientations.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-014-8662-9