1550-nm Driven ErAs:In(Al)GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth

ErAs:In(Al)GaAs superlattice photoconductors are grown using molecular beam epitaxy (MBE) with excellent material characteristics for terahertz time-domain spectroscopy (TDS) systems operating at 1550 nm. The transmitter material (Tx) features a record resistivity of 3.85 kΩcm and record breakdown f...

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Bibliographic Details
Published in:Journal of infrared, millimeter and terahertz waves millimeter and terahertz waves, 2018-04, Vol.39 (4), p.340-348
Main Authors: Nandi, U., Norman, J. C., Gossard, A. C., Lu, H., Preu, S.
Format: Article
Language:English
Subjects:
Bandwidths
Classical Electrodynamics
Electrical Engineering
Electronics and Microelectronics
Engineering
Epitaxial growth
Field strength
Gallium arsenide
Instrumentation
Lasers
Molecular beam epitaxy
Photoconductors
Superlattices
Time domain analysis
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Summary:ErAs:In(Al)GaAs superlattice photoconductors are grown using molecular beam epitaxy (MBE) with excellent material characteristics for terahertz time-domain spectroscopy (TDS) systems operating at 1550 nm. The transmitter material (Tx) features a record resistivity of 3.85 kΩcm and record breakdown field strength of 170 ± 40 kV/cm (dark) and 130 ± 20 kV/cm (illuminated with 45 mW laser power). Receivers (Rx) with different superlattice structures were fabricated showing very high mobility (775 cm 2 /Vs). The TDS system using these photoconductors features a bandwidth larger than 6.5 THz with a laser power of 45 mW at Tx and 16 mW at Rx.
ISSN:1866-6892
1866-6906
DOI:10.1007/s10762-018-0471-9