Embedded carbon bridges in low-k PECVD silicon carbonitride films using silazane precursors

Low-k, carbon-rich SiCxNy films for diffusion barrier applications have been fabricated by plasma-enhanced chemical vapor deposition (PECVD) using silazanes as the single-source precursor. Linear and cyclic silazane precursors with vinyl groups yield SiCxNy films with carbon bridges, namely ethylene...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-07, Vol.58 (SH), p.SHHB01
Main Authors: Chang, Wei-Yuan, Chen, Wei-Zhong, Lee, Hung-Tse, Leu, Jihperng
Format: Article
Language:English
Subjects:
Carbon
Diffusion barriers
Ethylene
Organic chemistry
Plasma enhanced chemical vapor deposition
Precursors
Silicon carbonitride
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Summary:Low-k, carbon-rich SiCxNy films for diffusion barrier applications have been fabricated by plasma-enhanced chemical vapor deposition (PECVD) using silazanes as the single-source precursor. Linear and cyclic silazane precursors with vinyl groups yield SiCxNy films with carbon bridges, namely ethylene bridges (Si-CH2-CH2-Si) and methylene bridges (Si-CH2-Si), which are readily formed and embedded with the Si-N(-C) matrix. A SiCxNy film of low k = 3.2 is achieved by successful incorporation of ethylene bridge embedded within the Si-N(-Cx) network by using a linear silazane precursor. Also, for these silazanes-deposited SiCxNy films at a fixed dielectric constant below 4.2, cyclic silazane, VSZ (1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane) produces films of higher film density and modulus, compared to those by a linear silazane precursor.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab1fd5