A low phase noise InGaP–GaAs HBT Colpitts VCO with a high quality differential inductor

A balanced Colpitts voltage controlled oscillator (VCO) topology with its two implementations in a GaAs heterojunction bipolar transistor (HBT) process is introduced in this paper. A detailed analysis of phase noise, originating from the work by Hajimiri and Lee, is given, which depicts a specific o...

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Bibliographic Details
Published in:Analog integrated circuits and signal processing 2019-08, Vol.100 (2), p.469-482
Main Authors: Cheng, Xu, Gao, Haijun, Chen, Feng-Jun, Xia, Xinlin, Deng, Xianjin
Format: Article
Language:English
Subjects:
Circuits and Systems
Computer simulation
Electrical Engineering
Engineering
Harmonic oscillators
Heterojunction bipolar transistors
Microwave communications
Noise
Noise generation
Numerical simulations
Optimization
Phase noise
Semiconductor devices
Signal,Image and Speech Processing
Theoretical analysis
Topology
Voltage controlled oscillators
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Summary:A balanced Colpitts voltage controlled oscillator (VCO) topology with its two implementations in a GaAs heterojunction bipolar transistor (HBT) process is introduced in this paper. A detailed analysis of phase noise, originating from the work by Hajimiri and Lee, is given, which depicts a specific outline of the phase noise generation mechanisms in GaAs HBT based harmonic oscillators including LC cross coupled/Colpitts/class C VCOs. In addition, phase noise expressions for HBT based VCOs are derived, compared and act as an optimization tool in oscillator designs. The theoretical analysis of phase noise is authenticated with two balanced Colpitts VCOs with their respective center oscillation frequencies of 850 MHz and 1670 MHz, which are fabricated in a 2 µm GaAs HBT H20HL process. Measurement results show a phase noise of − 139 dBc/Hz at 1 MHz offset from an 850 MHz carrier and a phase noise of − 134 dBc/Hz or less at 1 MHz offset from a 1700 MHz carrier. The output power variation is less than 0.5 dBm over the tuning range. A relatively good match between numerical simulation and measurements is observed.
ISSN:0925-1030
1573-1979
DOI:10.1007/s10470-019-01426-w