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Deposition of fluorocarbon groups on wood surfaces using the jet of an atmospheric-pressure dielectric barrier discharge
This work reports the functionalization of sugar maple ( Acer saccharum ) wood surfaces following their exposure to the jet of an atmospheric-pressure dielectric barrier discharge operated in either Ar or N 2 with C 3 F 8 (octafluoropropane) as the growth precursor for plasma-enhanced chemical vapou...
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Published in: | Wood science and technology 2017-11, Vol.51 (6), p.1339-1352 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This work reports the functionalization of sugar maple (
Acer saccharum
) wood surfaces following their exposure to the jet of an atmospheric-pressure dielectric barrier discharge operated in either Ar or N
2
with C
3
F
8
(octafluoropropane) as the growth precursor for plasma-enhanced chemical vapour deposition. Analysis of the current–voltage characteristics (I–V) revealed a filamentary behaviour in all conditions. While more intense current peaks were observed after addition of C
3
F
8
in Ar, a decrease in the discharge current was seen in N
2
/C
3
F
8
plasmas. Optical emission spectroscopy showed the apparition of a CF
2
+
continuum and CF
2
rovibrational bands between 225 and 350 nm with increasing applied voltage and precursor concentration in the Ar plasmas; a feature ascribed to the presence of plasma-generated C
3
F
8
fragments. In such conditions, water contact angle (WCA) measurements indicated that freshly sanded wood samples became highly hydrophobic, with WCAs in the 140° range and excellent dimensional stability for a period of up to 125 days. X-ray photoelectron spectroscopy revealed that such behaviours result from the deposition of highly hydrophobic CF
x
groups on the surface. On the other hand, no increase in surface hydrophobicity was observed following exposure to the jet of N
2
/C
3
F
8
plasmas, probably due to their much lower precursor fragmentation levels. |
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ISSN: | 0043-7719 1432-5225 |
DOI: | 10.1007/s00226-017-0958-x |