Microcrystalline Structure and Light-Emitting Properties of 3C–SiC Island Films Grown on the Si(100) Surface

The crystal structure features and light-emitting properties of 3 C –SiC island films grown at decreased temperatures on the Si(100) surface by vacuum chemical epitaxy with the use of hydrogen-containing compounds are studied. The nucleation character and growth mechanisms of the nanocrystalline tex...

Full description

Saved in:
Bibliographic Details
Published in:Physics of the solid state 2019-07, Vol.61 (7), p.1263-1271
Main Authors: Orlov, L. K., Vdovin, V. I., Ivina, N. L.
Format: Article
Language:English
Subjects:
Analysis
Banded structure
Cathodoluminescence
Crystal structure
Crystals
Dependence
Epitaxy
Hydrogen
Light emission
Line spectra
Nanocrystals
Nucleation
Optical Properties
Organic chemistry
Oxygen content
Physics
Physics and Astronomy
Silicon carbide
Silicon dioxide
Silicon substrates
Size effects
Solid State Physics
Structure
Ultraviolet spectra
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The crystal structure features and light-emitting properties of 3 C –SiC island films grown at decreased temperatures on the Si(100) surface by vacuum chemical epitaxy with the use of hydrogen-containing compounds are studied. The nucleation character and growth mechanisms of the nanocrystalline texture of microislands and the effect of elastic stresses accumulated on the surface of a growing carbide film on the shape of nucleating islands are traced by the methods of microscopy. The cathodoluminescence spectra from the surface carbidized Si layer and different areas of an individual 3 C –SiC island are compared. The possible mechanisms of the appearance of additional spectral lines shifted with respect to the major peak towards the red and ultraviolet spectral regions in the observed spectra of epitaxial structures are discussed. These emission bands were earlier revealed only in the luminescence spectra of SiC nanocrystallites embedded into different (most often SiO 2 ) matrices. The comparative analysis of the behavior of lines in the observed luminescent spectra has not revealed any appreciable size effect of formed surface nanocrystallites on their positions, but demonstrated their evident dependence on the oxygen content at the 3 C –SiC layer/silicon substrate interface.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783419070217