Fabrication, characterizations, and electron transportation from CdS/Cd/Si heterojunctions by the radio frequency magnetron sputtering method

CdS/Cd/Si heterojunctions have been prepared through depositing cadmium nanocrystallites (nc-Cd) and CdS nanocrystallites in turn on the single-crystal silicon wafer by the radio frequency (RF) magnetron sputtering method, which structures have been investigated by XRD and SEM techniques. Moreover,...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2019-08, Vol.125 (8), p.1-5, Article 549
Main Authors: Li, Yong, Ji, Peng Fei, Song, Yue Li, Zhou, Feng Qun, Yuan, Shu Qing, Tian, Ming Li, Huang, Hong Chun
Format: Article
Language:English
Subjects:
Applied physics
Cadmium sulfide
Characterization and Evaluation of Materials
Circuits
Condensed Matter Physics
Current density
Dark current
Electric potential
Electrons
Energy conversion efficiency
Heterojunctions
Machines
Magnetron sputtering
Manufacturing
Materials science
Nanocrystals
Nanotechnology
Optical and Electronic Materials
Photovoltaic cells
Physics
Physics and Astronomy
Processes
Radio frequency
Relaxation time
Short circuit currents
Silicon
Silicon wafers
Single crystals
Surfaces and Interfaces
Thin Films
Transportation
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Summary:CdS/Cd/Si heterojunctions have been prepared through depositing cadmium nanocrystallites (nc-Cd) and CdS nanocrystallites in turn on the single-crystal silicon wafer by the radio frequency (RF) magnetron sputtering method, which structures have been investigated by XRD and SEM techniques. Moreover, the dark/light current density vs voltage ( I – V ) and the impedance spectroscopy have been recorded to study the roles of incorporated nc-Cd in the electron transportation. The introduction of nc-Cd into the heterojunctions interface is helpful for the electron transportation at forward voltage. After nc-Cd has been introduced into the interface, the relaxation time, short-circuit current density, and energy conversion efficiency have been enhanced. Those are ascribed to the reduction of the defect concentration due to the introduction of nc-Cd into the interface of CdS/Si heterojunctions.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-019-2861-9