Optical Properties of Anisotropic Excitons in Phosphorene

• Published in: arXiv.org 2019-07
• Main Authors: Brunetti, Matthew N, Berman, Oleg L, Roman Ya Kezerashvili
• Format: Article
• Language: English
• Subjects: Absorptivity; Anisotropy; Binding energy; Boron nitride; Coulomb potential; Current carriers; Dielectric strength; Excitons; Heterostructures; Interlayers; Linear polarization; Optical properties; Phosphorene; Separation; Silicon
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.1907.11344

We study the eigenenergies and optical properties of both direct excitons in a phosphorene monolayer in different dielectric environments, and indirect excitons in heterostructures of phosphorene with hexagonal boron nitride. For these systems, we solve the 2D Schr\"{o}dinger equation using the Rytova-Keldysh (RK) potential for direct, and both the RK and Coulomb potentials for indirect excitons. The results show that excitons formed from charge carriers with anisotropic effective mass exhibit enhanced (suppressed) optical absorption, compared to their 2D isotropic counterparts, under linearly polarized excitations along the crystal axis with relatively smaller (larger) effective carrier masses. This anisotropy leads to dramatically different excited states than the isotropic exciton. The direct exciton binding energy depends strongly on the dielectric environment, and shows good agreement with previously published data. For indirect excitons, the oscillator strength and absorption coefficient increase as the interlayer separation increases. The choice of RK or Coulomb potential does not significantly change the indirect exciton optical properties, but leads to significant differences in the binding energy for small interlayer separation.