Valley‐Hall Photonic Topological Insulators with Dual‐Band Kink States

Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF is introduced into photonic systems, and several valley‐Hall photonic topological insulators (PTIs) are experimentally demonstrated. However, i...

Full description

Saved in:
Bibliographic Details
Published in:Advanced optical materials 2019-08, Vol.7 (15), p.n/a
Main Authors: Chen, Qiaolu, Zhang, Li, He, Mengjia, Wang, Zuojia, Lin, Xiao, Gao, Fei, Yang, Yihao, Zhang, Baile, Chen, Hongsheng
Format: Article
Language:English
Subjects:
Bends
Circuits
Degrees of freedom
Domain walls
dual‐band
Electromagnetic wave filters
Frequencies
kink states
Materials science
Optics
photonic topological insulators
Photonics
Substrates
Topological insulators
Topology
valley‐Hall
Waveguides
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF is introduced into photonic systems, and several valley‐Hall photonic topological insulators (PTIs) are experimentally demonstrated. However, in the previous valley‐Hall PTIs, topological kink states only work at a single frequency band, which limits potential applications in multiband waveguides, filters, communications, and so on. To overcome this challenge, here a valley‐Hall PTI, where the topological kink states exist at two separated frequency bands, is experimentally demonstrated in a microwave substrate‐integrated circuitry. Both the simulated and experimental results demonstrate the dual‐band valley‐Hall topological kink states are robust against the sharp bends of the internal domain wall with negligible intervalley scattering. This work may pave the way for multichannel substrate‐integrated photonic devices with high efficiency and high capacity for information communications and processing. Valley‐Hall photonic topological insulators with dual‐band kink states are experimentally demonstrated, where the topological kink states exist at two separated frequency bands, in a microwave substrate‐integrated circuitry. Both simulated and experimental results indicate the dual‐band valley‐Hall topological kink states are robust against the sharp bends of the internal domain wall with negligible intervalley scattering.
ISSN:2195-1071
2195-1071
DOI:10.1002/adom.201900036