Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications

• Published in: Journal of electronic materials 2019-10, Vol.48 (10), p.6724-6734
• Main Authors: Venkatesh, M., Suguna, M., Balamurugan, N. B.
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; CMOS; Computer simulation; Dielectrics; Electronics and Microelectronics; Field effect transistors; Germanium; Hafnium oxide; Instrumentation; Materials Science; Mathematical models; Optical and Electronic Materials; Semiconductor devices; Silicon; Silicon devices; Solid State Physics
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-019-07492-0

An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET is proposed. The dielectric gate oxide structure is comprised of Silicon-dioxide and Hafnium oxide. The high-K dielectric materials overcomes the Short Channel Effects caused by ultrathin silicon devices. The subthreshold analysis is carried out by solving a 2-D Poisson’s equation using the parabolic approximation method. The electrical characteristics of Ge(SRC)-DH-DD-TM-SG-Tunnel FET are analyzed using a 3-D Sentaurus TCAD device simulator and compared with the silicon based single halo and triple material surrounding gate TFET structures. The proposed model shows a lower ambipolar current and a better I ON /I OFF ratio of 10 6 . Moreover, the influence of germanium/silicon in dual dielectric materials has reduced the tunneling barrier width and the ON current (10 −4  A/μm) of the proposed device and improved at the level of CMOS transistors.