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Effect of KF Addition to (Cu,Ag)2SnS3 Thin Films Prepared by Sulfurization Process

(Cu,Ag)2SnS3 thin films and solar cells are prepared by sulfurization of KF/Sn/(Cu + Ag) stacked precursors in a sulfur and tin mixing atmosphere. Their properties are investigated. Stacked KF/Sn/(Cu + Ag) precursors are deposited on Mo/soda lime glass substrate by sequential evaporation of Cu + Ag,...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2019-08, Vol.216 (15), p.n/a
Main Authors: Nakashima, Mitsuki, Hirano, Shun, Yamaguchi, Toshiyuki, Araki, Hideaki, Katagiri, Hironori, Akaki, Yoji, Sasano, Junji, Izaki, Masanobu
Format: Article
Language:English
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Summary:(Cu,Ag)2SnS3 thin films and solar cells are prepared by sulfurization of KF/Sn/(Cu + Ag) stacked precursors in a sulfur and tin mixing atmosphere. Their properties are investigated. Stacked KF/Sn/(Cu + Ag) precursors are deposited on Mo/soda lime glass substrate by sequential evaporation of Cu + Ag, Sn elements, and KF. The molar ratios of the evaporation materials are held constant at (Cu + Ag):Sn = 1.0:0.6 and Ag/(Cu + Ag) = 0.05, and the KF/Cu molar ratio is changed from 0 to 0.05. The precursors are crystallized by annealing for 30 min at 570 °C in a sulfur and tin mixing atmosphere. The compositions are approximately constant, and the dependence of the composition ratio on the KF addition quantity is not observed. For all samples, the X‐ray diffraction patterns and the Raman spectra corresponding to CATS are obtained. The values of Voc increased with increasing KF/Cu molar ratio until KF/Cu = 0.03. The best solar cell in this study showed a Voc of 248 mV. (Cu,Ag)2SnS3 thin films are successfully fabricated by sulfurization processes of evaporated KF/Sn/(Cu+Ag) precursors in a sulfur and tin mixing atmosphere. The addition of KF to the (Cu,Ag)2SnS3 thin‐film solar cell can be considered a useful technique for the improvement of Voc, because the Voc of the samples which added KF are larger than the Voc of a KF‐free.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201800870