Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW

•InGaN templates reveal a gradual relaxation mechanism with varying composition.•A combination of SIMS with PL can determine composition and relaxation.•Relaxation can be enhanced by a high density of dislocations in the substrate.•MQWs emission is controlled by varying the indium in the underlying...

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Bibliographic Details
Published in:Journal of crystal growth 2019-08, Vol.520, p.18-26
Main Authors: Abdelhamid, Mostafa, Reynolds, J.G., El-Masry, N.A., Bedair, S.M.
Format: Article
Language:English
Subjects:
A1. High resolution X-ray diffraction (HRXRD)
A3. InGaN relaxation
A3. InGaN semibulk
A3. Metal Organic Chemical Vapor Deposition (MOCVD)
A3. Multiple quantum wells (MQWs)
B1. Nitrides
Design parameters
Gallium nitrides
Indium
Indium gallium nitrides
Lattice parameters
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Photoluminescence
Quantum wells
Strain relaxation
Substrates
Thickness
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Description
Summary:•InGaN templates reveal a gradual relaxation mechanism with varying composition.•A combination of SIMS with PL can determine composition and relaxation.•Relaxation can be enhanced by a high density of dislocations in the substrate.•MQWs emission is controlled by varying the indium in the underlying InGaN template. InxGa1−xN (0 
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2019.05.019