High-Sensitive Sensing Elements Based on Spin Valves with Antiferromagnetic Interlayer Coupling

Spin valves Ta/(Ni 80 Fe 20 ) 60 Cr 40 /Co 70 Fe 20 Ni 10 /Cu/Co 70 Fe 20 Ni 10 /Ru/Co 70 Fe 20 Ni 10 /Fe 50 Mn 50 /Ta have been prepared by magnetron sputtering. It was found that the shift of low-field hysteresis loop with respect to H = 0 oscillates as the copper layer thickness changes. Structur...

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Bibliographic Details
Published in:Physics of metals and metallography 2019-07, Vol.120 (7), p.653-659
Main Authors: Naumova, L. I., Milyaev, M. A., Zavornitsin, R. S., Pavlova, A. Yu, Maksimova, I. K., Krinitsina, T. P., Chernyshova, T. A., Proglyado, V. V., Ustinov, V. V.
Format: Article
Language:English
Subjects:
Antiferromagnetism
Chemistry and Materials Science
Copper
Dependence
Electrical and Magnetic Properties
Hysteresis loops
Interlayers
Magnetoresistance
Magnetoresistivity
Magnetron sputtering
Materials Science
Meanders
Metallic Materials
Spin valves
Thickness
Valves
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Summary:Spin valves Ta/(Ni 80 Fe 20 ) 60 Cr 40 /Co 70 Fe 20 Ni 10 /Cu/Co 70 Fe 20 Ni 10 /Ru/Co 70 Fe 20 Ni 10 /Fe 50 Mn 50 /Ta have been prepared by magnetron sputtering. It was found that the shift of low-field hysteresis loop with respect to H = 0 oscillates as the copper layer thickness changes. Structural studies showed the high perfection of the layer microstructure. Films of spin valves with the copper layer thickness corresponding to the second antiferromagnetic RKKI interaction maximum have been synthesized. They exhibit zero shift of low-field hysteresis loop and are characterized by high magnetoresistance effect. Sensing elements in the form of meanders prepared using the films demonstrate the almost anhysteretical field dependence of magnetoresistance and a magnetoresistive sensitivity of 0.5%/Oe.
ISSN:0031-918X
1555-6190
DOI:10.1134/S0031918X1907007X