A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching

A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film structures, comparable to a range of resistive switches, offering a...

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Bibliographic Details
Published in:Journal of applied physics 2019-08, Vol.126 (6)
Main Authors: Sevic, John F., Kobayashi, Nobuhiko P.
Format: Article
Language:English
Subjects:
Applied physics
Channel morphology
Metastable state
Morphology
Switches
Switching
Thin films
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Summary:A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film structures, comparable to a range of resistive switches, offering an alternative computational formulation based on metastable states treated at the atomic scale. In contrast to previous resistive switching thin film models, our formulation makes no a priori assumptions on conducting channel morphology and its fundamental transport mechanisms. Our method produces conducting channel morphology consistent with available experimental observations.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5110911