A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching

A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film structures, comparable to a range of resistive switches, offering a...

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Published in:Journal of applied physics 2019-08, Vol.126 (6)
Main Authors: Sevic, John F., Kobayashi, Nobuhiko P.
Format: Article
Language:English
Subjects:
Applied physics
Channel morphology
Metastable state
Morphology
Switches
Switching
Thin films
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cited_by cdi_FETCH-LOGICAL-c327t-217902b89fb3a4e444b3d42972204fd82b620d53bede531f90f390420abcc2e3
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description A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film structures, comparable to a range of resistive switches, offering an alternative computational formulation based on metastable states treated at the atomic scale. In contrast to previous resistive switching thin film models, our formulation makes no a priori assumptions on conducting channel morphology and its fundamental transport mechanisms. Our method produces conducting channel morphology consistent with available experimental observations.
doi_str_mv 10.1063/1.5110911
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2272414919</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2272414919</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-217902b89fb3a4e444b3d42972204fd82b620d53bede531f90f390420abcc2e3</originalsourceid><addsrcrecordid>eNqdkMtKAzEUhoMoWKsL3yDgSmFqTpJxJu5K8QaCG_dDJpc2Mp2MSaalD-L7mlrBvavD4Xz_f-BD6BLIDMgdu4VZCUAEwBGaAKlFUZUlOUYTQigUtajEKTqL8YMQgJqJCfqaY-XXw5hkcr6XHR5WMhpsnek0jmnUO-xtRno9quT6JVYr2femw9aH9U8Gux7rjBuVglM4rfJuXbeO93iON85scfJbGXS-mNy-i07lNz64pevjvjyY6GJyG4Pj1iWV88tzdGJlF83F75yi98eH98Vz8fr29LKYvxaK0SoVFCpBaFsL2zLJDee8ZZpTUVFKuNU1be8o0SVrjTYlAyuIZYJwSmSrFDVsiq4OtUPwn6OJqfnwY8gWYkNpRTlwASJT1wdKBR9jMLYZglvLsGuANHvpDTS_0jN7c2Cjcgel_4M3PvyBzaAt-wYoWZJk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2272414919</pqid></control><display><type>article</type><title>A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Sevic, John F. ; Kobayashi, Nobuhiko P.</creator><creatorcontrib>Sevic, John F. ; Kobayashi, Nobuhiko P.</creatorcontrib><description>A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film structures, comparable to a range of resistive switches, offering an alternative computational formulation based on metastable states treated at the atomic scale. In contrast to previous resistive switching thin film models, our formulation makes no a priori assumptions on conducting channel morphology and its fundamental transport mechanisms. Our method produces conducting channel morphology consistent with available experimental observations.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5110911</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Channel morphology ; Metastable state ; Morphology ; Switches ; Switching ; Thin films</subject><ispartof>Journal of applied physics, 2019-08, Vol.126 (6)</ispartof><rights>Author(s)</rights><rights>2019 Author(s). Published under license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-217902b89fb3a4e444b3d42972204fd82b620d53bede531f90f390420abcc2e3</citedby><cites>FETCH-LOGICAL-c327t-217902b89fb3a4e444b3d42972204fd82b620d53bede531f90f390420abcc2e3</cites><orcidid>0000-0002-2721-1057</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27900,27901</link.rule.ids></links><search><creatorcontrib>Sevic, John F.</creatorcontrib><creatorcontrib>Kobayashi, Nobuhiko P.</creatorcontrib><title>A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching</title><title>Journal of applied physics</title><description>A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film structures, comparable to a range of resistive switches, offering an alternative computational formulation based on metastable states treated at the atomic scale. In contrast to previous resistive switching thin film models, our formulation makes no a priori assumptions on conducting channel morphology and its fundamental transport mechanisms. Our method produces conducting channel morphology consistent with available experimental observations.</description><subject>Applied physics</subject><subject>Channel morphology</subject><subject>Metastable state</subject><subject>Morphology</subject><subject>Switches</subject><subject>Switching</subject><subject>Thin films</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqdkMtKAzEUhoMoWKsL3yDgSmFqTpJxJu5K8QaCG_dDJpc2Mp2MSaalD-L7mlrBvavD4Xz_f-BD6BLIDMgdu4VZCUAEwBGaAKlFUZUlOUYTQigUtajEKTqL8YMQgJqJCfqaY-XXw5hkcr6XHR5WMhpsnek0jmnUO-xtRno9quT6JVYr2femw9aH9U8Gux7rjBuVglM4rfJuXbeO93iON85scfJbGXS-mNy-i07lNz64pevjvjyY6GJyG4Pj1iWV88tzdGJlF83F75yi98eH98Vz8fr29LKYvxaK0SoVFCpBaFsL2zLJDee8ZZpTUVFKuNU1be8o0SVrjTYlAyuIZYJwSmSrFDVsiq4OtUPwn6OJqfnwY8gWYkNpRTlwASJT1wdKBR9jMLYZglvLsGuANHvpDTS_0jN7c2Cjcgel_4M3PvyBzaAt-wYoWZJk</recordid><startdate>20190814</startdate><enddate>20190814</enddate><creator>Sevic, John F.</creator><creator>Kobayashi, Nobuhiko P.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2721-1057</orcidid></search><sort><creationdate>20190814</creationdate><title>A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching</title><author>Sevic, John F. ; Kobayashi, Nobuhiko P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-217902b89fb3a4e444b3d42972204fd82b620d53bede531f90f390420abcc2e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Channel morphology</topic><topic>Metastable state</topic><topic>Morphology</topic><topic>Switches</topic><topic>Switching</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sevic, John F.</creatorcontrib><creatorcontrib>Kobayashi, Nobuhiko P.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sevic, John F.</au><au>Kobayashi, Nobuhiko P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching</atitle><jtitle>Journal of applied physics</jtitle><date>2019-08-14</date><risdate>2019</risdate><volume>126</volume><issue>6</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film structures, comparable to a range of resistive switches, offering an alternative computational formulation based on metastable states treated at the atomic scale. In contrast to previous resistive switching thin film models, our formulation makes no a priori assumptions on conducting channel morphology and its fundamental transport mechanisms. Our method produces conducting channel morphology consistent with available experimental observations.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5110911</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-2721-1057</orcidid></addata></record>
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ispartof Journal of applied physics, 2019-08, Vol.126 (6)
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1089-7550
language eng
recordid cdi_proquest_journals_2272414919
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Applied physics
Channel morphology
Metastable state
Morphology
Switches
Switching
Thin films
title A computational phase field study of conducting channel formation in dielectric thin films: A view toward the physical origins of resistive switching
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-24T16%3A56%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20computational%20phase%20field%20study%20of%20conducting%20channel%20formation%20in%20dielectric%20thin%20films:%20A%20view%20toward%20the%20physical%20origins%20of%20resistive%20switching&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Sevic,%20John%20F.&rft.date=2019-08-14&rft.volume=126&rft.issue=6&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.5110911&rft_dat=%3Cproquest_cross%3E2272414919%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c327t-217902b89fb3a4e444b3d42972204fd82b620d53bede531f90f390420abcc2e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2272414919&rft_id=info:pmid/&rfr_iscdi=true