Facile synthesis and controlling factors of highly uniform nanostructured MoS2 thin films as buffer layers in gas sensors

Large-area highly uniform MoS 2 thin film deposition by surface modification and solvent miscellany, crystallization and tuneable grain size by annealing and sulfurization facilitates the implementation of MoS 2 thin films as buffer layers. MoS 2 is a layered material and is not soluble in any solve...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2019-09, Vol.125 (9), p.1-8, Article 618
Main Authors: Gottam, Sandeep Reddy, Tsai, Chi-Ting, Wang, Li-Wen, Lin, Jun-Ting, Lin, Chun-Cheng, Chu, Sheng-Yuan
Format: Article
Language:English
Subjects:
Applied physics
Buffer layers
Characterization and Evaluation of Materials
Condensed Matter Physics
Crystallization
Deposition
Gas sensors
Grain size
Heat treatment
Low concentrations
Machines
Manufacturing
Materials science
Memristors
Molybdenum disulfide
Morphology
Nanotechnology
Optical and Electronic Materials
Organic chemistry
Physics
Physics and Astronomy
Processes
Solvents
Sulfurization
Surfaces and Interfaces
Thin Films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Large-area highly uniform MoS 2 thin film deposition by surface modification and solvent miscellany, crystallization and tuneable grain size by annealing and sulfurization facilitates the implementation of MoS 2 thin films as buffer layers. MoS 2 is a layered material and is not soluble in any solvent and the dispersion will not be uniform which can be solved with our solvent system. To use MoS 2 as a buffer layer, many factors are significant in controlling the parameters without affecting the material chemical characteristics. Thermal treatment with modulated sulfurization reforms the grain morphology yielding the flexibility of usage in more applications. MoS 2 uniform thin film showed ultra-fast response and recovery rates of approximately 3 and 2.5 s for low concentrations of hydrogen gas and change is sensitivity for a small change in temperature. The uniform scattering with nano-sized grains throughout the film increases the surface area and hence escorts the thin film usage as buffer layers in MISIM structure of memristors. Cost-effective growth, deposition and fabrication techniques is a breakthrough for metal sulfide thin films.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-019-2916-y