Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm

We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and 124 nm respectively. The recess etched region had a roughness...

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Bibliographic Details
Published in:arXiv.org 2019-08
Main Authors: Kumar, Sandeep, Vura, Sandeep, Dolmanan, Surani B, Tripathy, Sudhiranjan, Muralidharan, R, Nath, Digbijoy N
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Breakdown
Electric fields
High electron mobility transistors
MOSFETs
Semiconductor devices
Threshold voltage
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Summary:We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and 124 nm respectively. The recess etched region had a roughness of 0.7 nm. Various recess etch depths and dielectric annealing conditions were used to tune the VTH. The optimized device exhibited on-current and VTH of 500 mA/mm and 5 V respectively. The measured breakdown characteristics of the devices and their limitations were investigated using 2D-TCAD device simulation. The penetration of the residual electric field in most of the recess region could be the reason for the premature breakdown of deeply scaled recess-gate e-mode HEMTs.
ISSN:2331-8422