Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation

The effects of gamma rays on two kinds of GaN high-electron-mobility transistors (HEMTs) have been investigated in this paper. We have identified a gate degradation using a combination of optical and electrical measurements. We have demonstrated that the channel current under the degradation positio...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2019-09, Vol.66 (9), p.3784-3788
Main Authors: Zheng, Xiang, Feng, Shiwei, Peng, Chao, Lin, Gang, Bai, Lin, Li, Xuan, Yang, Ying, Pan, Shijie, Hu, Zhaoxu, Li, Xiaoyang, Zhang, Yamin
Format: Article
Language:English
Subjects:
Current measurement
Degradation
Electric contacts
Electrical measurement
Emission analysis
Gallium nitride
Gamma irradiation
Gamma rays
GaN
gate degradation
HEMTs
High electron mobility transistors
high-electron-mobility transistors (HEMTs)
Logic gates
Radiation effects
Semiconductor devices
Stress
subthreshold current
Temperature dependence
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effects of gamma rays on two kinds of GaN high-electron-mobility transistors (HEMTs) have been investigated in this paper. We have identified a gate degradation using a combination of optical and electrical measurements. We have demonstrated that the channel current under the degradation position is outside of the gate's control. This degradation prevents the gate from fully pinching off the channel, creating a current concentration region when applying a reverse gate voltage. An integrated analysis, including {I} - {V} characterization, the emission microscope (EMMI) technique, and temperature-dependent measurements, was applied to study its mechanism. It is attributed to an irradiation-induced degradation in the Schottky contact.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2928560